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Variation-Tolerant High-Reliability Sensing Scheme for Deep Submicrometer STT-MRAM

contributor authorWang Kang
contributor authorZheng Li
contributor authorZhaohao Wang
contributor authorDeng, Erya
contributor authorKlein, Jacques-Olivier
contributor authorYouguang Zhang
contributor authorChappert, Claude
contributor authorRavelosona, Dafine
contributor authorWeisheng Zhao
date accessioned2020-03-13T00:32:07Z
date available2020-03-13T00:32:07Z
date issued2014
identifier issn0018-9464
identifier other6971743.pdf
identifier urihttp://libsearch.um.ac.ir:80/fum/handle/fum/1150197?show=full
formatgeneral
languageEnglish
publisherIEEE
titleVariation-Tolerant High-Reliability Sensing Scheme for Deep Submicrometer STT-MRAM
typeJournal Paper
contenttypeMetadata Only
identifier padid8333596
subject keywordsCMOS digital integrated circuits
subject keywordsMRAM devices
subject keywordsMonte Carlo methods
subject keywordscharge exchange
subject keywordsintegrated circuit design
subject keywordslow-power electronics
subject keywordsmagnetoresistance
subject keywordsCMOS design kit
subject keywordsMTJ
subject keywordsMonte Carlo simulations
subject keywordscharge transfer amplification
subject keywordsdeep submicrometer STT-MRAM
subject keywordshigh-reliability sensing circuit
subject keywordslow-power technology
subject keywordsmagnetic tunnel junction
subject keywordspreindustrial prototypes
subject keywordsprocess variations
subject keywordsrelatively small tunnel magnetoresistance ratio
subject keywordsscalable nonvolatile memory technology
subject keywordssensing margin
subject keywordssize
identifier doi10.1109/TMAG.2014.2321551
journal titleMagnetics, IEEE Transactions on
journal volume50
journal issue11
filesize973968
citations0


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