Variation-Tolerant High-Reliability Sensing Scheme for Deep Submicrometer STT-MRAM
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سال
: 2014شناسه الکترونیک: 10.1109/TMAG.2014.2321551
کلیدواژه(گان): CMOS digital integrated circuits,MRAM devices,Monte Carlo methods,charge exchange,integrated circuit design,low-power electronics,magnetoresistance,CMOS design kit,MTJ,Monte Carlo simulations,charge transfer amplification,deep submicrometer STT-MRAM,high-reliability sensing circuit,low-power technology,magnetic tunnel junction,preindustrial prototypes,process variations,relatively small tunnel magnetoresistance ratio,scalable nonvolatile memory technology,sensing margin,size
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Variation-Tolerant High-Reliability Sensing Scheme for Deep Submicrometer STT-MRAM
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| contributor author | Wang Kang | |
| contributor author | Zheng Li | |
| contributor author | Zhaohao Wang | |
| contributor author | Deng, Erya | |
| contributor author | Klein, Jacques-Olivier | |
| contributor author | Youguang Zhang | |
| contributor author | Chappert, Claude | |
| contributor author | Ravelosona, Dafine | |
| contributor author | Weisheng Zhao | |
| date accessioned | 2020-03-13T00:32:07Z | |
| date available | 2020-03-13T00:32:07Z | |
| date issued | 2014 | |
| identifier issn | 0018-9464 | |
| identifier other | 6971743.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1150197?locale-attribute=fa | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Variation-Tolerant High-Reliability Sensing Scheme for Deep Submicrometer STT-MRAM | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8333596 | |
| subject keywords | CMOS digital integrated circuits | |
| subject keywords | MRAM devices | |
| subject keywords | Monte Carlo methods | |
| subject keywords | charge exchange | |
| subject keywords | integrated circuit design | |
| subject keywords | low-power electronics | |
| subject keywords | magnetoresistance | |
| subject keywords | CMOS design kit | |
| subject keywords | MTJ | |
| subject keywords | Monte Carlo simulations | |
| subject keywords | charge transfer amplification | |
| subject keywords | deep submicrometer STT-MRAM | |
| subject keywords | high-reliability sensing circuit | |
| subject keywords | low-power technology | |
| subject keywords | magnetic tunnel junction | |
| subject keywords | preindustrial prototypes | |
| subject keywords | process variations | |
| subject keywords | relatively small tunnel magnetoresistance ratio | |
| subject keywords | scalable nonvolatile memory technology | |
| subject keywords | sensing margin | |
| subject keywords | size | |
| identifier doi | 10.1109/TMAG.2014.2321551 | |
| journal title | Magnetics, IEEE Transactions on | |
| journal volume | 50 | |
| journal issue | 11 | |
| filesize | 973968 | |
| citations | 0 |