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contributor authorToledano-Luque, Maria
contributor authorDegraeve, Robin
contributor authorRoussel, P.J.
contributor authorRagnarsson, Lars-Ake
contributor authorChiarella, T.
contributor authorHoriguchi, Naoto
contributor authorMocuta, Anda
contributor authorThean, A.
date accessioned2020-03-13T00:16:42Z
date available2020-03-13T00:16:42Z
date issued2014
identifier issn0018-9383
identifier other6870474.pdf
identifier urihttp://libsearch.um.ac.ir:80/fum/handle/fum/1140823?show=full
formatgeneral
languageEnglish
publisherIEEE
titleFast Ramped Voltage Characterization of Single Trap Bias and Temperature Impact on Time-Dependent <inline-formula> <img src="/images/tex/18637.gif" alt="V_{\\rm TH}"> </inline-formula> Variability
typeJournal Paper
contenttypeMetadata Only
identifier padid8323219
subject keywordsMOSFET
subject keywordsnegative bias temperature instability
subject keywordssemiconductor device noise
subject keywordscapture times
subject keywordscircuit simulators
subject keywordscircuit stability
subject keywordscircuit variability
subject keywordsdensity scaling
subject keywordsemission times
subject keywordsfast ramped voltage characterization
subject keywordsgate voltage
subject keywordsmodern CMOS devices
subject keywordsnanometer-scaled devices
subject keywordsoperational temperatures
subject keywordsrandom telegraph noise assessment
subject keywordssingle trap bias
subject keywordsswitching traps
subject keywordstemperature impact
subject keywordstime-dependent V<
subject keywordssub>
subject keywordsTH<
subject keywords/sub>
subject keywordsvariability
subject keywordsApproximation methods
subject keywordsCMOS integrated circuits
identifier doi10.1109/TED.2014.2340699
journal titleElectron Devices, IEEE Transactions on
journal volume61
journal issue9
filesize1222963
citations0


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