Fast Ramped Voltage Characterization of Single Trap Bias and Temperature Impact on Time-Dependent <inline-formula> <img src="/images/tex/18637.gif" alt="V_{\\rm TH}"> </inline-formula> Variability
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: 2014شناسه الکترونیک: 10.1109/TED.2014.2340699
کلیدواژه(گان): MOSFET,negative bias temperature instability,semiconductor device noise,capture times,circuit simulators,circuit stability,circuit variability,density scaling,emission times,fast ramped voltage characterization,gate voltage,modern CMOS devices,nanometer-scaled devices,operational temperatures,random telegraph noise assessment,single trap bias,switching traps,temperature impact,time-dependent V<,sub>,TH<,/sub>,variability,Approximation methods,CMOS integrated circuits
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Fast Ramped Voltage Characterization of Single Trap Bias and Temperature Impact on Time-Dependent <inline-formula> <img src="/images/tex/18637.gif" alt="V_{\\rm TH}"> </inline-formula> Variability
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| contributor author | Toledano-Luque, Maria | |
| contributor author | Degraeve, Robin | |
| contributor author | Roussel, P.J. | |
| contributor author | Ragnarsson, Lars-Ake | |
| contributor author | Chiarella, T. | |
| contributor author | Horiguchi, Naoto | |
| contributor author | Mocuta, Anda | |
| contributor author | Thean, A. | |
| date accessioned | 2020-03-13T00:16:42Z | |
| date available | 2020-03-13T00:16:42Z | |
| date issued | 2014 | |
| identifier issn | 0018-9383 | |
| identifier other | 6870474.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1140823 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Fast Ramped Voltage Characterization of Single Trap Bias and Temperature Impact on Time-Dependent <inline-formula> <img src="/images/tex/18637.gif" alt="V_{\\rm TH}"> </inline-formula> Variability | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8323219 | |
| subject keywords | MOSFET | |
| subject keywords | negative bias temperature instability | |
| subject keywords | semiconductor device noise | |
| subject keywords | capture times | |
| subject keywords | circuit simulators | |
| subject keywords | circuit stability | |
| subject keywords | circuit variability | |
| subject keywords | density scaling | |
| subject keywords | emission times | |
| subject keywords | fast ramped voltage characterization | |
| subject keywords | gate voltage | |
| subject keywords | modern CMOS devices | |
| subject keywords | nanometer-scaled devices | |
| subject keywords | operational temperatures | |
| subject keywords | random telegraph noise assessment | |
| subject keywords | single trap bias | |
| subject keywords | switching traps | |
| subject keywords | temperature impact | |
| subject keywords | time-dependent V< | |
| subject keywords | sub> | |
| subject keywords | TH< | |
| subject keywords | /sub> | |
| subject keywords | variability | |
| subject keywords | Approximation methods | |
| subject keywords | CMOS integrated circuits | |
| identifier doi | 10.1109/TED.2014.2340699 | |
| journal title | Electron Devices, IEEE Transactions on | |
| journal volume | 61 | |
| journal issue | 9 | |
| filesize | 1222963 | |
| citations | 0 |