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High-Photocurrent and Wide-Bandwidth UTC Photodiodes With Dipole-Doped Structure

contributor authorQian Qian Meng
contributor authorHong Wang
contributor authorChong Yang Liu
contributor authorKian Siong Ang
contributor authorXin Guo
contributor authorBo Gao
contributor authorYang Tian
contributor authorManoj Kumar, C.M.
contributor authorJianjun Gao
date accessioned2020-03-13T00:15:32Z
date available2020-03-13T00:15:32Z
date issued2014
identifier issn1041-1135
identifier other6866204.pdf
identifier urihttp://libsearch.um.ac.ir:80/fum/handle/fum/1140110?show=full
formatgeneral
languageEnglish
publisherIEEE
titleHigh-Photocurrent and Wide-Bandwidth UTC Photodiodes With Dipole-Doped Structure
typeJournal Paper
contenttypeMetadata Only
identifier padid8322421
subject keywordsIII-V semiconductors
subject keywordsequivalent circuits
subject keywordsindium compounds
subject keywordsoptical fabrication
subject keywordsoptical materials
subject keywordsoptical multilayers
subject keywordsphotoconductivity
subject keywordsphotodiodes
subject keywordsphotoemission
subject keywordsInGaAs-InP
subject keywordsInGaAs/InP absorption
subject keywordsInGaAs/InP interface
subject keywordsInP-based UTC-PD
subject keywordsInP-based unitraveling-carrier photodiodes
subject keywordsUTC-PD device
subject keywordsbandwidth 1.9 GHz
subject keywordsbandwidth 62.5 GHz
subject keywordscollection interface
subject keywordscomplexity reduction
subject keywordscurrent 160 mA
subject keywordscurrent blocking effect
subject keywordscurrent blocking suppression
subject keywordsdevice fabrication
subject keywordsdipole-doped layers
subject keywordsdi
identifier doi10.1109/LPT.2014.2343260
journal titlePhotonics Technology Letters, IEEE
journal volume26
journal issue19
filesize838915
citations0


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