High-Photocurrent and Wide-Bandwidth UTC Photodiodes With Dipole-Doped Structure
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: 2014شناسه الکترونیک: 10.1109/LPT.2014.2343260
کلیدواژه(گان): III-V semiconductors,equivalent circuits,indium compounds,optical fabrication,optical materials,optical multilayers,photoconductivity,photodiodes,photoemission,InGaAs-InP,InGaAs/InP absorption,InGaAs/InP interface,InP-based UTC-PD,InP-based unitraveling-carrier photodiodes,UTC-PD device,bandwidth 1.9 GHz,bandwidth 62.5 GHz,collection interface,complexity reduction,current 160 mA,current blocking effect,current blocking suppression,device fabrication,dipole-doped layers,di
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High-Photocurrent and Wide-Bandwidth UTC Photodiodes With Dipole-Doped Structure
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| contributor author | Qian Qian Meng | |
| contributor author | Hong Wang | |
| contributor author | Chong Yang Liu | |
| contributor author | Kian Siong Ang | |
| contributor author | Xin Guo | |
| contributor author | Bo Gao | |
| contributor author | Yang Tian | |
| contributor author | Manoj Kumar, C.M. | |
| contributor author | Jianjun Gao | |
| date accessioned | 2020-03-13T00:15:32Z | |
| date available | 2020-03-13T00:15:32Z | |
| date issued | 2014 | |
| identifier issn | 1041-1135 | |
| identifier other | 6866204.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1140110?locale-attribute=fa | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | High-Photocurrent and Wide-Bandwidth UTC Photodiodes With Dipole-Doped Structure | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8322421 | |
| subject keywords | III-V semiconductors | |
| subject keywords | equivalent circuits | |
| subject keywords | indium compounds | |
| subject keywords | optical fabrication | |
| subject keywords | optical materials | |
| subject keywords | optical multilayers | |
| subject keywords | photoconductivity | |
| subject keywords | photodiodes | |
| subject keywords | photoemission | |
| subject keywords | InGaAs-InP | |
| subject keywords | InGaAs/InP absorption | |
| subject keywords | InGaAs/InP interface | |
| subject keywords | InP-based UTC-PD | |
| subject keywords | InP-based unitraveling-carrier photodiodes | |
| subject keywords | UTC-PD device | |
| subject keywords | bandwidth 1.9 GHz | |
| subject keywords | bandwidth 62.5 GHz | |
| subject keywords | collection interface | |
| subject keywords | complexity reduction | |
| subject keywords | current 160 mA | |
| subject keywords | current blocking effect | |
| subject keywords | current blocking suppression | |
| subject keywords | device fabrication | |
| subject keywords | dipole-doped layers | |
| subject keywords | di | |
| identifier doi | 10.1109/LPT.2014.2343260 | |
| journal title | Photonics Technology Letters, IEEE | |
| journal volume | 26 | |
| journal issue | 19 | |
| filesize | 838915 | |
| citations | 0 |