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Amorphous InGaZnO Ultraviolet Phototransistors With a Thin Ga<sub>2</sub>O<sub>3</sub> Layer

contributor authorShoou-Jinn Chang
contributor authorChang, T.H.
contributor authorWeng, W.Y.
contributor authorChiu, C.J.
contributor authorChang, S.P.
date accessioned2020-03-13T00:08:21Z
date available2020-03-13T00:08:21Z
date issued2014
identifier issn1077-260X
identifier other6832459.pdf
identifier urihttp://libsearch.um.ac.ir:80/fum/handle/fum/1135787?show=full
formatgeneral
languageEnglish
publisherIEEE
titleAmorphous InGaZnO Ultraviolet Phototransistors With a Thin Ga<sub>2</sub>O<sub>3</sub> Layer
typeJournal Paper
contenttypeMetadata Only
identifier padid8317344
subject keywordsamorphous semiconductors
subject keywordselectron mobility
subject keywordsgallium compounds
subject keywordsindium compounds
subject keywordsphototransistors
subject keywordsternary semiconductors
subject keywordszinc compounds
subject keywordsGa<
subject keywordssub>
subject keywords2<
subject keywords/sub>
subject keywordsO<
subject keywordssub>
subject keywords3<
subject keywords/sub>
subject keywordsInGaZnO
subject keywordsON/OFF current ratio
subject keywordsamorphous IGZO
subject keywordsamorphous ultraviolet phototransistors
subject keywordsdeep-ultraviolet (UV)-to-visible rejection ratio
subject keywordselectron mobility
subject keywordsnear-UV-to-visible rejection ratio
subject keywordsoxygen partial pressure
subject keywordssubthreshold swing
subject keywordsDielectrics
subject keywordsEducational institutions
subject keywordsLighting
subject keywordsLogic gates
subject keywordsMicroele
identifier doi10.1109/JSTQE.2014.2330604
journal titleSelected Topics in Quantum Electronics, IEEE Journal of
journal volume20
journal issue6
filesize699429
citations0


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