Amorphous InGaZnO Ultraviolet Phototransistors With a Thin Ga<sub>2</sub>O<sub>3</sub> Layer
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: 2014DOI: 10.1109/JSTQE.2014.2330604
Keyword(s): amorphous semiconductors,electron mobility,gallium compounds,indium compounds,phototransistors,ternary semiconductors,zinc compounds,Ga<,sub>,2<,/sub>,O<,sub>,3<,/sub>,InGaZnO,ON/OFF current ratio,amorphous IGZO,amorphous ultraviolet phototransistors,deep-ultraviolet (UV)-to-visible rejection ratio,electron mobility,near-UV-to-visible rejection ratio,oxygen partial pressure,subthreshold swing,Dielectrics,Educational institutions,Lighting,Logic gates,Microele
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Amorphous InGaZnO Ultraviolet Phototransistors With a Thin Ga<sub>2</sub>O<sub>3</sub> Layer
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contributor author | Shoou-Jinn Chang | |
contributor author | Chang, T.H. | |
contributor author | Weng, W.Y. | |
contributor author | Chiu, C.J. | |
contributor author | Chang, S.P. | |
date accessioned | 2020-03-13T00:08:21Z | |
date available | 2020-03-13T00:08:21Z | |
date issued | 2014 | |
identifier issn | 1077-260X | |
identifier other | 6832459.pdf | |
identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1135787?locale-attribute=en | |
format | general | |
language | English | |
publisher | IEEE | |
title | Amorphous InGaZnO Ultraviolet Phototransistors With a Thin Ga<sub>2</sub>O<sub>3</sub> Layer | |
type | Journal Paper | |
contenttype | Metadata Only | |
identifier padid | 8317344 | |
subject keywords | amorphous semiconductors | |
subject keywords | electron mobility | |
subject keywords | gallium compounds | |
subject keywords | indium compounds | |
subject keywords | phototransistors | |
subject keywords | ternary semiconductors | |
subject keywords | zinc compounds | |
subject keywords | Ga< | |
subject keywords | sub> | |
subject keywords | 2< | |
subject keywords | /sub> | |
subject keywords | O< | |
subject keywords | sub> | |
subject keywords | 3< | |
subject keywords | /sub> | |
subject keywords | InGaZnO | |
subject keywords | ON/OFF current ratio | |
subject keywords | amorphous IGZO | |
subject keywords | amorphous ultraviolet phototransistors | |
subject keywords | deep-ultraviolet (UV)-to-visible rejection ratio | |
subject keywords | electron mobility | |
subject keywords | near-UV-to-visible rejection ratio | |
subject keywords | oxygen partial pressure | |
subject keywords | subthreshold swing | |
subject keywords | Dielectrics | |
subject keywords | Educational institutions | |
subject keywords | Lighting | |
subject keywords | Logic gates | |
subject keywords | Microele | |
identifier doi | 10.1109/JSTQE.2014.2330604 | |
journal title | Selected Topics in Quantum Electronics, IEEE Journal of | |
journal volume | 20 | |
journal issue | 6 | |
filesize | 699429 | |
citations | 0 |