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A Simulation Study of Oxygen Vacancy-Induced Variability in <inline-formula> <img src="/images/tex/21669.gif" alt="{\\rm HfO}_{2}"> </inline-formula>/Metal Gated SOI FinFET

contributor authorTrivedi, Amit Ranjan
contributor authorAndo, Takehiro
contributor authorSinghee, Amith
contributor authorKerber, P.
contributor authorAcar, Esra
contributor authorFrank, David J.
contributor authorMukhopadhyay, Saibal
date accessioned2020-03-12T23:55:58Z
date available2020-03-12T23:55:58Z
date issued2014
identifier issn0018-9383
identifier other6782688.pdf
identifier urihttp://libsearch.um.ac.ir:80/fum/handle/fum/1128509?show=full
formatgeneral
languageEnglish
publisherIEEE
titleA Simulation Study of Oxygen Vacancy-Induced Variability in <inline-formula> <img src="/images/tex/21669.gif" alt="{\\rm HfO}_{2}"> </inline-formula>/Metal Gated SOI FinFET
typeJournal Paper
contenttypeMetadata Only
identifier padid8308691
subject keywordsMOSFET
subject keywordshafnium compounds
subject keywordshigh-k dielectric thin films
subject keywordssilicon-on-insulator
subject keywordsstatistical analysis
subject keywordsvacancies (crystal)
subject keywordswork function
subject keywordsHfO<
subject keywordssub>
subject keywords2<
subject keywords/sub>
subject keywordsOV concentration/distribution
subject keywordsOV-induced variability
subject keywordschannel length
subject keywordseffective gate workfunction
subject keywordsgate dielectric thickness scaling
subject keywordsgate electrostatics
subject keywordsgate first process
subject keywordsgate formation conditions
subject keywordsgate last process
subject keywordshigh-k dielectric
subject keywordsmetal gated SOI FinFET
subject keywordsoxygen vacancy defects
subject keywordsoxygen vacancy-induced variability
subject keywordspositivel
identifier doi10.1109/TED.2014.2313086
journal titleElectron Devices, IEEE Transactions on
journal volume61
journal issue5
filesize3001450
citations0


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