A Simulation Study of Oxygen Vacancy-Induced Variability in <inline-formula> <img src="/images/tex/21669.gif" alt="{\\rm HfO}_{2}"> </inline-formula>/Metal Gated SOI FinFET
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: 2014شناسه الکترونیک: 10.1109/TED.2014.2313086
کلیدواژه(گان): MOSFET,hafnium compounds,high-k dielectric thin films,silicon-on-insulator,statistical analysis,vacancies (crystal),work function,HfO<,sub>,2<,/sub>,OV concentration/distribution,OV-induced variability,channel length,effective gate workfunction,gate dielectric thickness scaling,gate electrostatics,gate first process,gate formation conditions,gate last process,high-k dielectric,metal gated SOI FinFET,oxygen vacancy defects,oxygen vacancy-induced variability,positivel
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A Simulation Study of Oxygen Vacancy-Induced Variability in <inline-formula> <img src="/images/tex/21669.gif" alt="{\\rm HfO}_{2}"> </inline-formula>/Metal Gated SOI FinFET
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| contributor author | Trivedi, Amit Ranjan | |
| contributor author | Ando, Takehiro | |
| contributor author | Singhee, Amith | |
| contributor author | Kerber, P. | |
| contributor author | Acar, Esra | |
| contributor author | Frank, David J. | |
| contributor author | Mukhopadhyay, Saibal | |
| date accessioned | 2020-03-12T23:55:58Z | |
| date available | 2020-03-12T23:55:58Z | |
| date issued | 2014 | |
| identifier issn | 0018-9383 | |
| identifier other | 6782688.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1128509 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | A Simulation Study of Oxygen Vacancy-Induced Variability in <inline-formula> <img src="/images/tex/21669.gif" alt="{\\rm HfO}_{2}"> </inline-formula>/Metal Gated SOI FinFET | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8308691 | |
| subject keywords | MOSFET | |
| subject keywords | hafnium compounds | |
| subject keywords | high-k dielectric thin films | |
| subject keywords | silicon-on-insulator | |
| subject keywords | statistical analysis | |
| subject keywords | vacancies (crystal) | |
| subject keywords | work function | |
| subject keywords | HfO< | |
| subject keywords | sub> | |
| subject keywords | 2< | |
| subject keywords | /sub> | |
| subject keywords | OV concentration/distribution | |
| subject keywords | OV-induced variability | |
| subject keywords | channel length | |
| subject keywords | effective gate workfunction | |
| subject keywords | gate dielectric thickness scaling | |
| subject keywords | gate electrostatics | |
| subject keywords | gate first process | |
| subject keywords | gate formation conditions | |
| subject keywords | gate last process | |
| subject keywords | high-k dielectric | |
| subject keywords | metal gated SOI FinFET | |
| subject keywords | oxygen vacancy defects | |
| subject keywords | oxygen vacancy-induced variability | |
| subject keywords | positivel | |
| identifier doi | 10.1109/TED.2014.2313086 | |
| journal title | Electron Devices, IEEE Transactions on | |
| journal volume | 61 | |
| journal issue | 5 | |
| filesize | 3001450 | |
| citations | 0 |