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Effect of back gate on parasitic bipolar effect in FD SOI MOSFETs

contributor authorLiu, Fanyu
contributor authorIonica, Irina
contributor authorBawedin, Maryline
contributor authorCristoloveanu, Sorin
date accessioned2020-03-12T22:53:15Z
date available2020-03-12T22:53:15Z
date issued2014
identifier other7028210.pdf
identifier urihttp://libsearch.um.ac.ir:80/fum/handle/fum/1097998?show=full
formatgeneral
languageEnglish
publisherIEEE
titleEffect of back gate on parasitic bipolar effect in FD SOI MOSFETs
typeConference Paper
contenttypeMetadata Only
identifier padid8239009
subject keywordsDigital TV
subject keywordsn Gold
subject keywordsn Very large scale integration
subject keywordsn Voltage-controlled oscillators
subject keywordsn C.S.DT VCO
subject keywordsn Current starved
subject keywordsn DTMOS
identifier doi10.1109/ICRAIE.2014.6909152
journal titleOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2014 IEEE
filesize672784
citations0


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