Effect of back gate on parasitic bipolar effect in FD SOI MOSFETs
ناشر:
سال
: 2014شناسه الکترونیک: 10.1109/ICRAIE.2014.6909152
کلیدواژه(گان): Digital TV,n Gold,n Very large scale integration,n Voltage-controlled oscillators,n C.S.DT VCO,n Current starved,n DTMOS
کالکشن
:
-
آمار بازدید
Effect of back gate on parasitic bipolar effect in FD SOI MOSFETs
Show full item record
| contributor author | Liu, Fanyu | |
| contributor author | Ionica, Irina | |
| contributor author | Bawedin, Maryline | |
| contributor author | Cristoloveanu, Sorin | |
| date accessioned | 2020-03-12T22:53:15Z | |
| date available | 2020-03-12T22:53:15Z | |
| date issued | 2014 | |
| identifier other | 7028210.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1097998 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Effect of back gate on parasitic bipolar effect in FD SOI MOSFETs | |
| type | Conference Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8239009 | |
| subject keywords | Digital TV | |
| subject keywords | n Gold | |
| subject keywords | n Very large scale integration | |
| subject keywords | n Voltage-controlled oscillators | |
| subject keywords | n C.S.DT VCO | |
| subject keywords | n Current starved | |
| subject keywords | n DTMOS | |
| identifier doi | 10.1109/ICRAIE.2014.6909152 | |
| journal title | OI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2014 IEEE | |
| filesize | 672784 | |
| citations | 0 |