Soft biometrics for subject identification using clothing attributes
ناشر:
سال
: 2014شناسه الکترونیک: 10.1109/DRC.2014.6872378
کلیدواژه(گان): III-V semiconductors,n MOSFET,n gallium arsenide,n indium compounds,n tunnelling,n BTBT,n DIBL,n III-V FETs,n In<,sub>,0.53<,/sub>,Ga<,sub>,0.47<,/sub>,As,n N+ source-drain,n SS,n band-to-band tunneling,n channel material,n channel-drain junction,n depletion region,n drain-induced barrier lowering,n electron transport properties,n high drain-field region,n narrow bandgap,n off-state leakage,n on-state characteristics
کالکشن
:
-
آمار بازدید
Soft biometrics for subject identification using clothing attributes
Show full item record
contributor author | Jaha, Emad Sami | |
contributor author | Nixon, Mark S. | |
date accessioned | 2020-03-12T22:09:59Z | |
date available | 2020-03-12T22:09:59Z | |
date issued | 2014 | |
identifier other | 6996278.pdf | |
identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1073761 | |
format | general | |
language | English | |
publisher | IEEE | |
title | Soft biometrics for subject identification using clothing attributes | |
type | Conference Paper | |
contenttype | Metadata Only | |
identifier padid | 8209885 | |
subject keywords | III-V semiconductors | |
subject keywords | n MOSFET | |
subject keywords | n gallium arsenide | |
subject keywords | n indium compounds | |
subject keywords | n tunnelling | |
subject keywords | n BTBT | |
subject keywords | n DIBL | |
subject keywords | n III-V FETs | |
subject keywords | n In< | |
subject keywords | sub> | |
subject keywords | 0.53< | |
subject keywords | /sub> | |
subject keywords | Ga< | |
subject keywords | sub> | |
subject keywords | 0.47< | |
subject keywords | /sub> | |
subject keywords | As | |
subject keywords | n N+ source-drain | |
subject keywords | n SS | |
subject keywords | n band-to-band tunneling | |
subject keywords | n channel material | |
subject keywords | n channel-drain junction | |
subject keywords | n depletion region | |
subject keywords | n drain-induced barrier lowering | |
subject keywords | n electron transport properties | |
subject keywords | n high drain-field region | |
subject keywords | n narrow bandgap | |
subject keywords | n off-state leakage | |
subject keywords | n on-state characteristics | |
identifier doi | 10.1109/DRC.2014.6872378 | |
journal title | iometrics (IJCB), 2014 IEEE International Joint Conference on | |
filesize | 745738 | |
citations | 0 |