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Temperature and back-gate bias influence on the operation of lateral SOI PIN photodiodes

contributor authorNovo, C.
contributor authorGiacomini, R.
contributor authorDoria, R.T.
contributor authorAfzalian, A.
contributor authorFlandre, D.
date accessioned2020-03-12T21:23:36Z
date available2020-03-12T21:23:36Z
date issued2014
identifier other6940097.pdf
identifier urihttp://libsearch.um.ac.ir:80/fum/handle/fum/1047513?show=full
formatgeneral
languageEnglish
publisherIEEE
titleTemperature and back-gate bias influence on the operation of lateral SOI PIN photodiodes
typeConference Paper
contenttypeMetadata Only
identifier padid8176665
subject keywordsCovariance matrices
subject keywordsCurrent measurement
subject keywordsEstimation
subject keywordsNoise
subject keywordsPhasor measurement units
subject keywordsTechnological innovation
subject keywordsVoltage measurement
identifier doi10.1109/PSCC.2014.7038329
journal titleicroelectronics Technology and Devices (SBMicro), 2014 29th Symposium on
filesize2089783
citations0


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