Temperature and back-gate bias influence on the operation of lateral SOI PIN photodiodes
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سال
: 2014شناسه الکترونیک: 10.1109/PSCC.2014.7038329
کلیدواژه(گان): Covariance matrices,Current measurement,Estimation,Noise,Phasor measurement units,Technological innovation,Voltage measurement
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Temperature and back-gate bias influence on the operation of lateral SOI PIN photodiodes
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contributor author | Novo, C. | |
contributor author | Giacomini, R. | |
contributor author | Doria, R.T. | |
contributor author | Afzalian, A. | |
contributor author | Flandre, D. | |
date accessioned | 2020-03-12T21:23:36Z | |
date available | 2020-03-12T21:23:36Z | |
date issued | 2014 | |
identifier other | 6940097.pdf | |
identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1047513 | |
format | general | |
language | English | |
publisher | IEEE | |
title | Temperature and back-gate bias influence on the operation of lateral SOI PIN photodiodes | |
type | Conference Paper | |
contenttype | Metadata Only | |
identifier padid | 8176665 | |
subject keywords | Covariance matrices | |
subject keywords | Current measurement | |
subject keywords | Estimation | |
subject keywords | Noise | |
subject keywords | Phasor measurement units | |
subject keywords | Technological innovation | |
subject keywords | Voltage measurement | |
identifier doi | 10.1109/PSCC.2014.7038329 | |
journal title | icroelectronics Technology and Devices (SBMicro), 2014 29th Symposium on | |
filesize | 2089783 | |
citations | 0 |