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The phenomenon of “sharp corner” of Electrolyte-Oxide-Semiconductor structure for copper ions detection

contributor authorGao, J.G. , Wang, H. , Ma, P.C. , Wengang Wu
date accessioned2020-03-12T20:50:13Z
date available2020-03-12T20:50:13Z
date issued2014
identifier other6908821.pdf
identifier urihttp://libsearch.um.ac.ir:80/fum/handle/fum/1027280?show=full
formatgeneral
languageEnglish
publisherIEEE
titleThe phenomenon of “sharp corner” of Electrolyte-Oxide-Semiconductor structure for copper ions detection
typeConference Paper
contenttypeMetadata Only
identifier padid8152375
subject keywordschaos
subject keywordslinear matrix inequalities
subject keywordsnonlinear control systems
subject keywordsrobust control
subject keywordsstochastic systems
subject keywordsuncertain systems
subject keywordsLMI approach
subject keywordsexponential decay rate
subject keywordsexponentially lag synchronization
subject keywordsimpulsive controller
subject keywordslinear matrix inequalities
subject keywordslinear matrix inequality
subject keywordsrobust impulsive lag synchronization
subject keywordsstochastic impulsive systems
subject keywordsstochastic perturbation
subject keywordsuncertain unified chaotic system
subject keywordsChaotic communication
subject keywordsControl systems
subject keywordsSymmetric matrices
subject keywordsSynchronization
subject keywordsUncertainty
subject keywordsVectors
subject keywordsComparis
identifier doi10.1109/ICNC.2014.6975879
journal titleano/Micro Engineered and Molecular Systems (NEMS), 2014 9th IEEE International Conference on
filesize637044
citations0


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