Improved device isolation in AlGaN/GaN HEMTs on Si by heavy Kr<sup>+</sup> Ion implantation
date accessioned | 2020-03-12T20:28:22Z | |
date available | 2020-03-12T20:28:22Z | |
date issued | 2014 | |
identifier other | 6872324.pdf | |
identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1015823?show=full | |
format | general | |
language | English | |
publisher | IEEE | |
title | Improved device isolation in AlGaN/GaN HEMTs on Si by heavy Kr<sup>+</sup> Ion implantation | |
type | Conference Paper | |
contenttype | Metadata Only | |
identifier padid | 8139547 | |
subject keywords | Mathematical model | |
subject keywords | Poles and towers | |
subject keywords | grounding electrode | |
subject keywords | lightning protection system | |
subject keywords | lines of force | |
subject keywords | mathematical modeling | |
subject keywords | numerical calculation | |
identifier doi | 10.1109/ICLP.2014.6973418 | |
journal title | evice Research Conference (DRC), 2014 72nd Annual | |
filesize | 299669 | |
citations | 0 | |
contributor rawauthor | Arulkumaran, S. , Ng, G.I. , Ranjan, K. , Saw, G.Z. , Murmu, P.P. , Kennedy, J. |
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