Improved device isolation in AlGaN/GaN HEMTs on Si by heavy Kr<sup>+</sup> Ion implantation
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سال
: 2014شناسه الکترونیک: 10.1109/ICLP.2014.6973418
کلیدواژه(گان): Mathematical model,Poles and towers,grounding electrode,lightning protection system,lines of force,mathematical modeling,numerical calculation
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آمار بازدید
Improved device isolation in AlGaN/GaN HEMTs on Si by heavy Kr<sup>&#x002B;</sup> Ion implantation
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| date accessioned | 2020-03-12T20:28:22Z | |
| date available | 2020-03-12T20:28:22Z | |
| date issued | 2014 | |
| identifier other | 6872324.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1015823 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Improved device isolation in AlGaN/GaN HEMTs on Si by heavy Kr<sup>+</sup> Ion implantation | |
| type | Conference Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8139547 | |
| subject keywords | Mathematical model | |
| subject keywords | Poles and towers | |
| subject keywords | grounding electrode | |
| subject keywords | lightning protection system | |
| subject keywords | lines of force | |
| subject keywords | mathematical modeling | |
| subject keywords | numerical calculation | |
| identifier doi | 10.1109/ICLP.2014.6973418 | |
| journal title | evice Research Conference (DRC), 2014 72nd Annual | |
| filesize | 299669 | |
| citations | 0 | |
| contributor rawauthor | Arulkumaran, S. , Ng, G.I. , Ranjan, K. , Saw, G.Z. , Murmu, P.P. , Kennedy, J. |