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Enhanced Operation Characteristics in Poly-Si Nanowire Charge-Trapping Flash Memory Device With SiGe Buried Channel

نوع: Journal Paper

نویسنده : Chun-Yuan Chen; Kuei-Shu Chang-Liao; Li-Jung Liu; Wei-Chieh Chen; Tien-Ko Wang

ناشر: IEEE

سال: 2014

Profiling of Channel-Hot-Carrier Stress-Induced Trap Distributions Along Channel and Gate Dielectric in High-<formula formulatype="inline"> <img src="/images/tex/348.gif" alt="k"> </formula> Gated MOSFETs by a Modified Charge Pumping Technique

نوع: Journal Paper

نویسنده : Chun-Chang Lu; Kuei-Shu Chang-Liao; Che-Hao Tsao; Tien-Ko Wang; Hsueh-Chao Ko; Yao-Tung Hsu

ناشر: IEEE

سال: 2014

Improved electrical characteristics high-k gated MOS devices with in-situ remote plasma treatment in atomic layer deposition

نوع: Journal Paper

نویسنده : Chen-Chien Li; Kuei-Shu Chang-Liao; Chung-Hao Fu; Tsung-Lin Hsieh; Li-Ting Chen; Yu-Liang Liao; Chun-Chang Lu; Tien-Ko Wang

سال: 2013

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Improved Electrical Characteristics of Ge MOS Devices With High Oxidation State in <inline-formula> <img src="/images/tex/21682.gif" alt="{\\rm HfGeO}_{\\rm x}"> </inline-formula> Interfacial Layer Formed by <italic>In Situ</italic> Desorption

نوع: Journal Paper

نویسنده : Chen-Chien Li; Kuei-Shu Chang-Liao; Li-Jung Liu; Tzu-Min Lee; Chung-Hao Fu; Ting-Ching Chen; Jen-Wei Cheng; Chun-Chang Lu; Tien-Ko Wang

ناشر: IEEE

سال: 2014

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Enhanced Operation Characteristics in Poly-Si Nanowire Charge-Trapping Flash Memory Device With SiGe Buried Channel

Profiling of Channel-Hot-Carrier Stress-Induced Trap Distributions Along Channel and Gate Dielectric in High-<formula formulatype="inline"> <img src="/images/tex/348.gif" alt="k"> </formula> Gated MOSFETs by a Modified Charge Pumping Technique

Improved electrical characteristics high-k gated MOS devices with in-situ remote plasma treatment in atomic layer deposition

Improved Electrical Characteristics of Ge MOS Devices With High Oxidation State in <inline-formula> <img src="/images/tex/21682.gif" alt="{\\rm HfGeO}_{\\rm x}"> </inline-formula> Interfacial Layer Formed by <italic>In Situ</italic> Desorption

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Enhanced Operation Characteristics in Poly-Si Nanowire Charge-Trapping Flash Memory Device With SiGe Buried Channel

Profiling of Channel-Hot-Carrier Stress-Induced Trap Distributions Along Channel and Gate Dielectric in High-<formula formulatype="inline"> <img src="/images/tex/348.gif" alt="k"> </formula> Gated MOSFETs by a Modified Charge Pumping Technique

Improved electrical characteristics high-k gated MOS devices with in-situ remote plasma treatment in atomic layer deposition

Improved Electrical Characteristics of Ge MOS Devices With High Oxidation State in <inline-formula> <img src="/images/tex/21682.gif" alt="{\\rm HfGeO}_{\\rm x}"> </inline-formula> Interfacial Layer Formed by <italic>In Situ</italic> Desorption