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SOI technology: An opportunity for RF designers?

نوع: Conference Paper

نویسنده : Raskin, J.-P.

ناشر: IEEE

سال: 2014

SOI technology: An opportunity for RF designers?

نوع: Conference Paper

نویسنده : Raskin, J.-P.

ناشر: IEEE

سال: 2014

High resistivity SOI wafer for mainstream RF System-on-Chip

نوع: Conference Paper

نویسنده : Raskin, J.-P.

ناشر: IEEE

سال: 2014

RF non-linearities from Si-based substrates

نوع: Conference Paper

نویسنده : Esfeh, B.K. , Ben Ali, K. , Raskin, J.-P.

ناشر: IEEE

سال: 2014

Efficient ultra low power rectification at 13.56 MHz for a 10 µA load current

نوع: Conference Paper

نویسنده : Haddad, P.-A.; Gosset, G.; Raskin, J.-P.; Flandre, D.

ناشر: IEEE

سال: 2014

On the MOSFET Threshold Voltage Extraction by Transconductance and Transconductance-to-Current Ratio Change Methods: Part I—Effect of Gate-Voltage-Dependent Mobility

نوع: Journal Paper

نویسنده : Rudenko, T.; Kilchytska, V.; Arshad, M.K.M.; Raskin, J.-P.; Nazarov, A.; Flandre, D.

ناشر: IEEE

سال: 2011

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28 nm FD SOI Technology Platform RF FoM

نوع: Conference Paper

نویسنده : Esfeh, B.Kazemi; Kilchytska, V.; Barral, V.; Planes, N.; Haond, M.; Flandre, D.; Raskin, J.-P.

ناشر: IEEE

سال: 2014

On the MOSFET Threshold Voltage Extraction by Transconductance and Transconductance-to-Current Ratio Change Methods: Part II—Effect of Drain Voltage

نوع: Journal Paper

نویسنده : Rudenko, T.; Kilchytska, V.; Arshad, M.K.M.; Raskin, J.-P.; Nazarov, A.; Flandre, D.

سال: 2011

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[IEEE 2012 13th International Conference on Ultimate Integration on Silicon (ULIS) - Grenoble, France (2012.03.6-2012.03.7)] 2012 13th International Conference on Ultimate Integration on Silicon (ULIS) - On extraction of self-heating features in UTBB SOI MOSFETs

نوع: Journal Paper

نویسنده : Makovejev, S.; Olsen, S.; Andrieu, F.; Poiroux, T.; Faynot, O.; Flandre, D.; Raskin, J.-P.; Kilchytska, V.

سال: 2012

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Variability of UTBB MOSFET analog figures of merit in wide frequency range

نوع: Conference Paper

نویسنده : Makovejev, S.; Esfeh, B.K.; Raskin, J.-P.; Kilchytska, V.; Flandre, D.; Barral, V.; Planes, N.; Haond, M.

ناشر: IEEE

سال: 2014

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SOI technology: An opportunity for RF designers?

SOI technology: An opportunity for RF designers?

High resistivity SOI wafer for mainstream RF System-on-Chip

RF non-linearities from Si-based substrates

Efficient ultra low power rectification at 13.56 MHz for a 10 µA load current

On the MOSFET Threshold Voltage Extraction by Transconductance and Transconductance-to-Current Ratio Change Methods: Part I—Effect of Gate-Voltage-Dependent Mobility

28 nm FD SOI Technology Platform RF FoM

On the MOSFET Threshold Voltage Extraction by Transconductance and Transconductance-to-Current Ratio Change Methods: Part II—Effect of Drain Voltage

[IEEE 2012 13th International Conference on Ultimate Integration on Silicon (ULIS) - Grenoble, France (2012.03.6-2012.03.7)] 2012 13th International Conference on Ultimate Integration on Silicon (ULIS) - On extraction of self-heating features in UTBB SOI MOSFETs

Variability of UTBB MOSFET analog figures of merit in wide frequency range

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SOI technology: An opportunity for RF designers?

SOI technology: An opportunity for RF designers?

High resistivity SOI wafer for mainstream RF System-on-Chip

RF non-linearities from Si-based substrates

Efficient ultra low power rectification at 13.56 MHz for a 10 &#x00B5;A load current

On the MOSFET Threshold Voltage Extraction by Transconductance and Transconductance-to-Current Ratio Change Methods: Part I—Effect of Gate-Voltage-Dependent Mobility

28 nm FD SOI Technology Platform RF FoM

On the MOSFET Threshold Voltage Extraction by Transconductance and Transconductance-to-Current Ratio Change Methods: Part II—Effect of Drain Voltage

[IEEE 2012 13th International Conference on Ultimate Integration on Silicon (ULIS) - Grenoble, France (2012.03.6-2012.03.7)] 2012 13th International Conference on Ultimate Integration on Silicon (ULIS) - On extraction of self-heating features in UTBB SOI MOSFETs

Variability of UTBB MOSFET analog figures of merit in wide frequency range

Efficient ultra low power rectification at 13.56 MHz for a 10 µA load current