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نمایش تعداد 1-7 از 7

Miscorrelation Between Air Gap Discharge and Human Metal Model Stresses Due to Multi-Finger Turn-On Effect

نوع: Journal Paper

نویسنده : Yunfeng Xi; Malobabic, Slavica; Vashchenko, Vladislav; Liou, Juin J.

ناشر: IEEE

سال: 2014

Reference voltage generation scheme enhancing speed and reliability for 1T1C-type FRAM

نوع: Journal Paper

نویسنده : Ze Jia; Gong Zhang; Jizhi Liu; Zhiwei Liu; Liou, Juin J.

ناشر: IET

سال: 2014

ESD Protection Device With Dual-Polarity Conduction and High Blocking Voltage Realized in CMOS Process

نوع: Journal Paper

نویسنده : Sirui Luo; Salcedo, Javier /A/.; Hajjar, Jean-Jacques; Yuanzhong Zhou; Liou, Juin J.

ناشر: IEEE

سال: 2014

A Novel Product-Level Human Metal Model Characterization Methodology

نوع: Journal Paper

نویسنده : Sirui Luo; Salcedo, Javier /A/.; Hajjar, Jean-Jacques; Yuanzhong Zhou; Liou, Juin J.

ناشر: IEEE

سال: 2014

In Situ ESD Protection Structure for Variable Operating Voltage Interface Applications in 28-nm CMOS Process

نوع: Journal Paper

نویسنده : Sirui Luo; Salcedo, Javier /A/.; Parthasarathy, Srinivasan; Yuanzhong Zhou; Hajjar, Jean-Jacques; Liou, Juin J.

ناشر: IEEE

سال: 2014

A Reliable Si3N4/Al2O3-HfO2 Stack MIM Capacitor for High-Voltage Analog Applications

نوع: Journal Paper

نویسنده : Ching-Sung Ho; San-Jung Chang; Shih-Chang Chen; Liou, Juin J.; Hongge Li

ناشر: IEEE

سال: 2014

Optimized pMOS-Triggered Bidirectional SCR for Low-Voltage ESD Protection Applications

نوع: Journal Paper

نویسنده : Zhixin Wang; Ruei-Cheng Sun; Liou, Juin J.; Don-Gey Liu

ناشر: IEEE

سال: 2014

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Miscorrelation Between Air Gap Discharge and Human Metal Model Stresses Due to Multi-Finger Turn-On Effect

Reference voltage generation scheme enhancing speed and reliability for 1T1C-type FRAM

ESD Protection Device With Dual-Polarity Conduction and High Blocking Voltage Realized in CMOS Process

A Novel Product-Level Human Metal Model Characterization Methodology

In Situ ESD Protection Structure for Variable Operating Voltage Interface Applications in 28-nm CMOS Process

A Reliable Si<sub>3</sub>N<sub>4</sub>/Al<sub>2</sub>O<sub>3</sub>-HfO<sub>2</sub> Stack MIM Capacitor for High-Voltage Analog Applications

Optimized pMOS-Triggered Bidirectional SCR for Low-Voltage ESD Protection Applications

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Miscorrelation Between Air Gap Discharge and Human Metal Model Stresses Due to Multi-Finger Turn-On Effect

Reference voltage generation scheme enhancing speed and reliability for 1T1C-type FRAM

ESD Protection Device With Dual-Polarity Conduction and High Blocking Voltage Realized in CMOS Process

A Novel Product-Level Human Metal Model Characterization Methodology

In Situ ESD Protection Structure for Variable Operating Voltage Interface Applications in 28-nm CMOS Process

A Reliable Si<sub>3</sub>N<sub>4</sub>/Al<sub>2</sub>O<sub>3</sub>-HfO<sub>2</sub> Stack MIM Capacitor for High-Voltage Analog Applications

Optimized pMOS-Triggered Bidirectional SCR for Low-Voltage ESD Protection Applications