Optimized pMOS-Triggered Bidirectional SCR for Low-Voltage ESD Protection Applications
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: 2014شناسه الکترونیک: 10.1109/TED.2014.2320827
کلیدواژه(گان): CMOS integrated circuits,electrostatic discharge,low-power electronics,thyristors,CMOS technology,PTBSCR,bidirectional protection performance,critical parameters,holding voltage,layout changes,leakage current,low-power protection applications,low-voltage ESD protection applications,pMOS-triggered bidirectional SCR,power-OFF conditions,power-ON conditions,silicon-controlled rectifier,size 0.18 mum,small silicon area consumption,trigger voltage,viable electrostatic discharge pr
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Optimized pMOS-Triggered Bidirectional SCR for Low-Voltage ESD Protection Applications
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contributor author | Zhixin Wang | |
contributor author | Ruei-Cheng Sun | |
contributor author | Liou, Juin J. | |
contributor author | Don-Gey Liu | |
date accessioned | 2020-03-13T00:04:09Z | |
date available | 2020-03-13T00:04:09Z | |
date issued | 2014 | |
identifier issn | 0018-9383 | |
identifier other | 6818402.pdf | |
identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1133261 | |
format | general | |
language | English | |
publisher | IEEE | |
title | Optimized pMOS-Triggered Bidirectional SCR for Low-Voltage ESD Protection Applications | |
type | Journal Paper | |
contenttype | Metadata Only | |
identifier padid | 8314399 | |
subject keywords | CMOS integrated circuits | |
subject keywords | electrostatic discharge | |
subject keywords | low-power electronics | |
subject keywords | thyristors | |
subject keywords | CMOS technology | |
subject keywords | PTBSCR | |
subject keywords | bidirectional protection performance | |
subject keywords | critical parameters | |
subject keywords | holding voltage | |
subject keywords | layout changes | |
subject keywords | leakage current | |
subject keywords | low-power protection applications | |
subject keywords | low-voltage ESD protection applications | |
subject keywords | pMOS-triggered bidirectional SCR | |
subject keywords | power-OFF conditions | |
subject keywords | power-ON conditions | |
subject keywords | silicon-controlled rectifier | |
subject keywords | size 0.18 mum | |
subject keywords | small silicon area consumption | |
subject keywords | trigger voltage | |
subject keywords | viable electrostatic discharge pr | |
identifier doi | 10.1109/TED.2014.2320827 | |
journal title | Electron Devices, IEEE Transactions on | |
journal volume | 61 | |
journal issue | 7 | |
filesize | 2671415 | |
citations | 0 |