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نمایش تعداد 1-4 از 4
Probe-induced resistive switching memory based on organic-inorganic lead halide perovskite materials
سال: 2019
خلاصه:
Abstract – In this paper we demonstrate a resistive storage device with CH3NH3PbI3−xClx/FTO structure which stores information in two levels of resistance states induced by electrical probe excitation. The perovskite layer ...
Thermal imaging of microwave power GaAs-FET with scanning thermal nanoprobe
سال: 2002
خلاصه:
Application of a new thermal nano-probe based on the changes of electrical resistivity of a nanometer-sized filament with temperature has been presented for the thermal imaging of microwave power active devices. The filament ...
Application of a Scanning Thermal Nano-Probe for Thermal Imaging of High Frequency Active devices
سال: 2005
خلاصه:
The first application of a new thermal nano-probe based on the changes of electrical resistivity of a nanometer-sized filament with temperature has been presented for the thermal imaging of microwave power active devices. ...