Probe-induced resistive switching memory based on organic-inorganic lead halide perovskite materials

Abstract

Abstract – In this paper we demonstrate a resistive storage device with CH3NH3PbI3−xClx/FTO structure which stores information in two levels of resistance states induced by electrical probe excitation. The perovskite layer is formed on a FTO coated glass by a single-step solution spin coating method in the air. We study the effects of different probe materials on the memory cell behavior including silver epoxy, copper and graphite. The device with silver probe shows a bipolar resistive switching behavior with 106 on/off resistance ratio in the forming process. The fabricated probe-based memory cell shows a minimum endurance of 104 cycles and a minimum retention time of 2×103 s. These experimental results confirm that organic-inorganic lead halide perovskite -OILHP- materials are a potential candidate to be used as a storage medium for probe based storage memories. This study provides a better understanding of resistive switching mechanism in organic-inorganic lead halide perovskites thin films that can be useful for understanding of the future probe-based beyond Moore’s law memory devices.