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نمایش تعداد 1-4 از 4
A graphite based STT-RAM cell with reduction in switching current
سال: 2015
خلاصه:
Spin Transfer Torque Random Access Memory (STT-RAM) is a serious candidate for “universal memory”
because of its non-volatility, fast access time, high density, good scalability, high endurance and relatively
low power dissipation...
Graphene-Based STT-RAM Cell With Improved Switching for Scaled Technology Nodes
سال: 2016
خلاصه:
Spin-transfer torque random-access memory (STT-RAM) is a nonvolatile, scalable, and fast memory structure, which benefits from high endurance and relatively low power consumption. However, there are some challenges in designing STT...
STT-RAM Energy Reduction Using Self-Referenced Differential Write Termination Technique
سال: 2017
خلاصه:
Spin-transfer torque random access memory (STT-RAM) has emerged as an attractive candidate for future nonvolatile memories. It advantages the benefits of current stateof-the-art memories including high-speed read operation (of static RAM), high...