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    Comparison of High and Low Field Electron Transport in Al0.2Ga0.8N, AlN and GaN 

    Type: Journal Paper
    Author : هادی عربشاهی; محمود رضائی رکن آبادی; M. Dastras; Hadi Arabshahi; Mahmood Rezaee Roknabadi
    Year: 2008
    Abstract:

    we present a comprehensive study of the transport dynamics of electrons in the binary and ternary compounds AlN, GaN and Al Ga N.

    Comparison of electron-plasmon scattering effect on low-field electron mobility in ZnO and SiC 

    Type: Journal Paper
    Author : هادی عربشاهی; محمود رضائی رکن آبادی; Hadi Arabshahi; Mahmood Rezaee Roknabadi
    Year: 2009
    Abstract:

    with deformation potential acoustic, piezoelectric, ionized impurity

    and electron-plasmon scattering. Band non-parabolicity, admixture of p functions, arbitrary degeneracy

    of the electron distribution, and the screening effects of free carriers...

    Thermoelectric power and low-field electron mobility in AlxGa1−xN lattice-matched to GaN 

    Type: Journal Paper
    Author : هادی عربشاهی; Hadi Arabshahi
    Year: 2009
    Abstract:

    phonons is considered jointly with deformation potential acoustic, piezoelectric, alloy and

    ionized-impurity scattering. Band non-parabolicity, admixture of p functions, arbitrary degeneracy of the

    electron distribution and the screening...

    ELECTRON TRANSPORT CHARACTERISTICS OF 6H-SIC AND 4H-SIC FOR HIGH TEMPERATURE DEVICE MODELING 

    Type: Journal Paper
    Author : هادی عربشاهی; محمود رضائی رکن آبادی; Hadi Arabshahi; Mahmood Rezaee Roknabadi
    Year: 2010
    Abstract:

    The Monte Carlo method is used to simulate electron transport in bulk würtzite phases of 6H-SiC and 4H-SiC using a three valley analytical band structure. Spherical, non-parabolic conduction band valleys at the , K and U symmetry points...

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