Thermoelectric power and low-field electron mobility in AlxGa1−xN lattice-matched to GaN
Year
: 2009
Abstract: The results of thermoelectric power and electron drift mobility in Al xGa1−xN lattice-matched to GaN are
calculated for different temperatures, free-electron concentrations and compositions. The two-mode nature
of the polar optic phonons is considered jointly with deformation potential acoustic, piezoelectric, alloy and
ionized-impurity scattering. Band non-parabolicity, admixture of p functions, arbitrary degeneracy of the
electron distribution and the screening effects of free carriers on the scattering probabilities are incorporated.
The Boltzmann equation is solved by an iterative technique using the currently established values of the
material parameters. The iterative results are in fair agreement with other recent calculations obtained using
the relaxation-time approximation and experimental methods.
calculated for different temperatures, free-electron concentrations and compositions. The two-mode nature
of the polar optic phonons is considered jointly with deformation potential acoustic, piezoelectric, alloy and
ionized-impurity scattering. Band non-parabolicity, admixture of p functions, arbitrary degeneracy of the
electron distribution and the screening effects of free carriers on the scattering probabilities are incorporated.
The Boltzmann equation is solved by an iterative technique using the currently established values of the
material parameters. The iterative results are in fair agreement with other recent calculations obtained using
the relaxation-time approximation and experimental methods.
Keyword(s): Thermoelectric power,optical phonon,piezoelectric,non-parabolicity,relaxation-time
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Thermoelectric power and low-field electron mobility in AlxGa1−xN lattice-matched to GaN
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| contributor author | هادی عربشاهی | en |
| contributor author | Hadi Arabshahi | fa |
| date accessioned | 2020-06-06T14:08:33Z | |
| date available | 2020-06-06T14:08:33Z | |
| date issued | 2009 | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/3384144 | |
| description abstract | The results of thermoelectric power and electron drift mobility in Al xGa1−xN lattice-matched to GaN are calculated for different temperatures, free-electron concentrations and compositions. The two-mode nature of the polar optic phonons is considered jointly with deformation potential acoustic, piezoelectric, alloy and ionized-impurity scattering. Band non-parabolicity, admixture of p functions, arbitrary degeneracy of the electron distribution and the screening effects of free carriers on the scattering probabilities are incorporated. The Boltzmann equation is solved by an iterative technique using the currently established values of the material parameters. The iterative results are in fair agreement with other recent calculations obtained using the relaxation-time approximation and experimental methods. | en |
| language | English | |
| title | Thermoelectric power and low-field electron mobility in AlxGa1−xN lattice-matched to GaN | en |
| type | Journal Paper | |
| contenttype | External Fulltext | |
| subject keywords | Thermoelectric power | en |
| subject keywords | optical phonon | en |
| subject keywords | piezoelectric | en |
| subject keywords | non-parabolicity | en |
| subject keywords | relaxation-time | en |
| journal title | Turkish Journal of Physics | fa |
| pages | 217-223 | |
| journal volume | 33 | |
| journal issue | 3 | |
| identifier link | https://profdoc.um.ac.ir/paper-abstract-1012410.html | |
| identifier articleid | 1012410 |