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نمایش تعداد 1-6 از 6

A Conductive AFM Nanoscale Analysis of NBTI and Channel Hot-Carrier Degradation in MOSFETs

نوع: Journal Paper

نویسنده : Qian Wu; Bayerl, A.; Porti, M.; Martin-Martinez, J.; Lanza, Mario; Rodriguez, Roberto; Velayudhan, V.; Nafria, M.; Aymerich, X.; Bargallo Gonzalez, Mireia; Simoen, Eddy

ناشر: IEEE

سال: 2014

Experimental Evidence Toward Understanding Charge Pumping Signals in 3-D Devices With Poly-Si Channel

نوع: Journal Paper

نویسنده : Baojun Tang; Weidong Zhang; Toledano-Luque, Maria; Jian Fu Zhang; Degraeve, Robin; Zhigang Ji; Arreghini, A.; Van den bosch, G.; Van Houdt, J.

ناشر: IEEE

سال: 2014

Poly Si Nanowire Thin Film Transistors With Vacuum Gap Design

نوع: Journal Paper

نویسنده : Tsung-Kuei Kang; Ysung-Yu Yang; Feng-Tso Chien

ناشر: IEEE

سال: 2014

Profiling of Channel-Hot-Carrier Stress-Induced Trap Distributions Along Channel and Gate Dielectric in High-<formula formulatype="inline"> <img src="/images/tex/348.gif" alt="k"> </formula> Gated MOSFETs by a Modified Charge Pumping Technique

نوع: Journal Paper

نویسنده : Chun-Chang Lu; Kuei-Shu Chang-Liao; Che-Hao Tsao; Tien-Ko Wang; Hsueh-Chao Ko; Yao-Tung Hsu

ناشر: IEEE

سال: 2014

Linear Drain Current Degradation of FG-pLEDMOS Transistor Under Pulse Gate Stress With Different Rising and Falling Edges

نوع: Journal Paper

نویسنده : Qinsong Qian; Tingting Huang; Siyang Liu; Weifeng Sun; Wei Su; Aijun Zhang; Shaorong Wang; Shulang Ma

ناشر: IEEE

سال: 2014

On the Origin of Anomalous Off–Current Under Hot Carrier Stress in p-Channel DDDMOS Transistors With STI Structure

نوع: Journal Paper

نویسنده : Ching-En Chen; Ting-Chang Chang; Hua-Mao Chen; Bo You; Kai-Hsiang Yang; Szu-Han Ho; Jyun-Yu Tsai; Kuan-Ju Liu; Ying-Hsin Lu; Yu-Ju Hung; Ya-Hsiang Tai; Tseung-Yuen Tseng

ناشر: IEEE

سال: 2014

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A Conductive AFM Nanoscale Analysis of NBTI and Channel Hot-Carrier Degradation in MOSFETs

Experimental Evidence Toward Understanding Charge Pumping Signals in 3-D Devices With Poly-Si Channel

Poly Si Nanowire Thin Film Transistors With Vacuum Gap Design

Profiling of Channel-Hot-Carrier Stress-Induced Trap Distributions Along Channel and Gate Dielectric in High-<formula formulatype="inline"> <img src="/images/tex/348.gif" alt="k"> </formula> Gated MOSFETs by a Modified Charge Pumping Technique

Linear Drain Current Degradation of FG-pLEDMOS Transistor Under Pulse Gate Stress With Different Rising and Falling Edges

On the Origin of Anomalous Off–Current Under Hot Carrier Stress in p-Channel DDDMOS Transistors With STI Structure

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A Conductive AFM Nanoscale Analysis of NBTI and Channel Hot-Carrier Degradation in MOSFETs

Experimental Evidence Toward Understanding Charge Pumping Signals in 3-D Devices With Poly-Si Channel

Poly Si Nanowire Thin Film Transistors With Vacuum Gap Design

Profiling of Channel-Hot-Carrier Stress-Induced Trap Distributions Along Channel and Gate Dielectric in High-<formula formulatype="inline"> <img src="/images/tex/348.gif" alt="k"> </formula> Gated MOSFETs by a Modified Charge Pumping Technique

Linear Drain Current Degradation of FG-pLEDMOS Transistor Under Pulse Gate Stress With Different Rising and Falling Edges

On the Origin of Anomalous Off&#x2013;Current Under Hot Carrier Stress in p-Channel DDDMOS Transistors With STI Structure

On the Origin of Anomalous Off–Current Under Hot Carrier Stress in p-Channel DDDMOS Transistors With STI Structure