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نمایش تعداد 1-2 از 2

Effect of Fringing Capacitances on the RF Performance of GaN HEMTs With T-Gates

نوع: Journal Paper

نویسنده : Bo Song; Sensale-Rodriguez, Berardi; Ronghua Wang; Jia Guo; Zongyang Hu; Yuanzheng Yue; Faria, Frederico; Schuette, Michael; Ketterson, Andrew; Beam, Edward; Saunier, Paul; Xiang Gao; Shiping Guo; Fay, Patrick; Jena, D.; Xing, Huili Grace

ناشر: IEEE

سال: 2014

A Simulation Study of Oxygen Vacancy-Induced Variability in <inline-formula> <img src="/images/tex/21669.gif" alt="{\\rm HfO}_{2}"> </inline-formula>/Metal Gated SOI FinFET

نوع: Journal Paper

نویسنده : Trivedi, Amit Ranjan; Ando, Takehiro; Singhee, Amith; Kerber, P.; Acar, Esra; Frank, David J.; Mukhopadhyay, Saibal

ناشر: IEEE

سال: 2014

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Effect of Fringing Capacitances on the RF Performance of GaN HEMTs With T-Gates

A Simulation Study of Oxygen Vacancy-Induced Variability in <inline-formula> <img src="/images/tex/21669.gif" alt="{\\rm HfO}_{2}"> </inline-formula>/Metal Gated SOI FinFET

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Effect of Fringing Capacitances on the RF Performance of GaN HEMTs With T-Gates

A Simulation Study of Oxygen Vacancy-Induced Variability in <inline-formula> <img src="/images/tex/21669.gif" alt="{\\rm HfO}_{2}"> </inline-formula>/Metal Gated SOI FinFET