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RISTime to failure analysis of single mode long-wavelength InGaAsP vertical-cavity surface emitting lasers
سال: 2014
خلاصه:
Abstract— In this paper, we investigate the time to failure (tf) analysis of a Single Mode 1.55 µm InGaAsP vertical cavity surface emitting laser (VCSEL) with two different electrical confinement structures. The electrical confinement introduced...
The Effectof nonlinear gain and Thermal Carrier scape on Dynamic Characterisations of GaAs/InGaAs Self-Assembled quantom Dot Lasers
سال: 2011
خلاصه:
The Effectof nonlinear gain and Thermal Carrier scape on Dynamic Characterisations of GaAs/InGaAs Self-Assembled quantom Dot Lasers...
InGaAs Gate-All-Around Nanowire Devices on 300mm Si Substrates
ناشر: IEEE
سال: 2014
High-Photocurrent and Wide-Bandwidth UTC Photodiodes With Dipole-Doped Structure
ناشر: IEEE
سال: 2014