Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs
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: 2014شناسه الکترونیک: 10.1109/TED.2014.2363732
کلیدواژه(گان): III-V semiconductors,MOSFET,crystallography,gallium arsenide,impact ionisation,indium compounds,nanowires,semiconductor device models,FinFET,III-V multiple-gate MOSFET,InGaAs,InGaAs lateral nanowire MOSFET,InGaAs multigate MOSFET,border traps,crystallographic planes,impact ionization,lateral nanowires,radiofrequency characterization,selective area regrowth,small-signal hybrid-&,#x03C0,model,voltage 0.5 V,Capacitance,FinFETs,Impact ionization,Indium gallium arsenide,L
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Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs
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| contributor author | Zota, C.B. | |
| contributor author | Roll, G. | |
| contributor author | Wernersson, L.-E. | |
| contributor author | Lind, E. | |
| date accessioned | 2020-03-13T00:28:39Z | |
| date available | 2020-03-13T00:28:39Z | |
| date issued | 2014 | |
| identifier issn | 0018-9383 | |
| identifier other | 6951495.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1148209 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8331291 | |
| subject keywords | III-V semiconductors | |
| subject keywords | MOSFET | |
| subject keywords | crystallography | |
| subject keywords | gallium arsenide | |
| subject keywords | impact ionisation | |
| subject keywords | indium compounds | |
| subject keywords | nanowires | |
| subject keywords | semiconductor device models | |
| subject keywords | FinFET | |
| subject keywords | III-V multiple-gate MOSFET | |
| subject keywords | InGaAs | |
| subject keywords | InGaAs lateral nanowire MOSFET | |
| subject keywords | InGaAs multigate MOSFET | |
| subject keywords | border traps | |
| subject keywords | crystallographic planes | |
| subject keywords | impact ionization | |
| subject keywords | lateral nanowires | |
| subject keywords | radiofrequency characterization | |
| subject keywords | selective area regrowth | |
| subject keywords | small-signal hybrid-& | |
| subject keywords | #x03C0 | |
| subject keywords | model | |
| subject keywords | voltage 0.5 V | |
| subject keywords | Capacitance | |
| subject keywords | FinFETs | |
| subject keywords | Impact ionization | |
| subject keywords | Indium gallium arsenide | |
| subject keywords | L | |
| identifier doi | 10.1109/TED.2014.2363732 | |
| journal title | Electron Devices, IEEE Transactions on | |
| journal volume | 61 | |
| journal issue | 12 | |
| filesize | 2287613 | |
| citations | 0 |