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نمایش تعداد 1-3 از 3
High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping
ناشر: IEEE
سال: 2014
Improved Channel Mobility in 4H-SiC MOSFETs by Boron Passivation
ناشر: IEEE
سال: 2014
Spin diffusion and the role of screening effects in semiconductors
ناشر: IEEE
سال: 2014