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نمایش تعداد 1-7 از 7

Carrier Mobility in Undoped Triple-Gate FinFET Structures and Limitations of Its Description in Terms of Top and Sidewall Channel Mobilities

نوع: Journal Paper

نویسنده : Rudenko, T.; Kilchytska, V.; Collaert, N.; Jurczak, M.; Nazarov, A.; Flandre, D.

ناشر: IEEE

سال: 2008

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On the MOSFET Threshold Voltage Extraction by Transconductance and Transconductance-to-Current Ratio Change Methods: Part I—Effect of Gate-Voltage-Dependent Mobility

نوع: Journal Paper

نویسنده : Rudenko, T.; Kilchytska, V.; Arshad, M.K.M.; Raskin, J.-P.; Nazarov, A.; Flandre, D.

ناشر: IEEE

سال: 2011

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Quasi-double gate regime to boost UTBB SOI MOSFET performance in analog and sleep transistor applications

نوع: Journal Paper

نویسنده : Kilchytska, V.; Bol, D.; De Vos, J.; Andrieu, F.; Flandre, D.

ناشر: Elsevier Science

سال: 2013

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28 nm FD SOI Technology Platform RF FoM

نوع: Conference Paper

نویسنده : Esfeh, B.Kazemi; Kilchytska, V.; Barral, V.; Planes, N.; Haond, M.; Flandre, D.; Raskin, J.-P.

ناشر: IEEE

سال: 2014

On the MOSFET Threshold Voltage Extraction by Transconductance and Transconductance-to-Current Ratio Change Methods: Part II—Effect of Drain Voltage

نوع: Journal Paper

نویسنده : Rudenko, T.; Kilchytska, V.; Arshad, M.K.M.; Raskin, J.-P.; Nazarov, A.; Flandre, D.

سال: 2011

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[IEEE 2012 13th International Conference on Ultimate Integration on Silicon (ULIS) - Grenoble, France (2012.03.6-2012.03.7)] 2012 13th International Conference on Ultimate Integration on Silicon (ULIS) - On extraction of self-heating features in UTBB SOI MOSFETs

نوع: Journal Paper

نویسنده : Makovejev, S.; Olsen, S.; Andrieu, F.; Poiroux, T.; Faynot, O.; Flandre, D.; Raskin, J.-P.; Kilchytska, V.

سال: 2012

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Variability of UTBB MOSFET analog figures of merit in wide frequency range

نوع: Conference Paper

نویسنده : Makovejev, S.; Esfeh, B.K.; Raskin, J.-P.; Kilchytska, V.; Flandre, D.; Barral, V.; Planes, N.; Haond, M.

ناشر: IEEE

سال: 2014

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Carrier Mobility in Undoped Triple-Gate FinFET Structures and Limitations of Its Description in Terms of Top and Sidewall Channel Mobilities

On the MOSFET Threshold Voltage Extraction by Transconductance and Transconductance-to-Current Ratio Change Methods: Part I—Effect of Gate-Voltage-Dependent Mobility

Quasi-double gate regime to boost UTBB SOI MOSFET performance in analog and sleep transistor applications

28 nm FD SOI Technology Platform RF FoM

On the MOSFET Threshold Voltage Extraction by Transconductance and Transconductance-to-Current Ratio Change Methods: Part II—Effect of Drain Voltage

[IEEE 2012 13th International Conference on Ultimate Integration on Silicon (ULIS) - Grenoble, France (2012.03.6-2012.03.7)] 2012 13th International Conference on Ultimate Integration on Silicon (ULIS) - On extraction of self-heating features in UTBB SOI MOSFETs

Variability of UTBB MOSFET analog figures of merit in wide frequency range

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Carrier Mobility in Undoped Triple-Gate FinFET Structures and Limitations of Its Description in Terms of Top and Sidewall Channel Mobilities

On the MOSFET Threshold Voltage Extraction by Transconductance and Transconductance-to-Current Ratio Change Methods: Part I—Effect of Gate-Voltage-Dependent Mobility

Quasi-double gate regime to boost UTBB SOI MOSFET performance in analog and sleep transistor applications

28 nm FD SOI Technology Platform RF FoM

On the MOSFET Threshold Voltage Extraction by Transconductance and Transconductance-to-Current Ratio Change Methods: Part II—Effect of Drain Voltage

[IEEE 2012 13th International Conference on Ultimate Integration on Silicon (ULIS) - Grenoble, France (2012.03.6-2012.03.7)] 2012 13th International Conference on Ultimate Integration on Silicon (ULIS) - On extraction of self-heating features in UTBB SOI MOSFETs

Variability of UTBB MOSFET analog figures of merit in wide frequency range