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Now showing items 1-10 of 11

Non-Linearity Analysis of RF Ohmic Switches Based on Phase Change Materials

Type: Journal Paper

Author : Yonghyun Shim; Rais-Zadeh, Mina

Publisher: IEEE

Year: 2014

Can Transient Phenomena Help Improving Time Resolution in Scintillators?

Type: Journal Paper

Author : Lecoq, P.; Korzhik, Mikhael; Vasiliev, A.

Publisher: IEEE

Year: 2014

Petabit/s transmission using multicore fibers

Type: Conference Paper

Publisher: IEEE

Year: 2014

Adaptive identification of continuous-time switched linear and piecewise linear systems

Type: Conference Paper

Author : Kersting, S. , Buss, M.

Publisher: IEEE

Year: 2014

Electric Field and Temperature Dependence of Electrical Conductivity in Biaxially Oriented Polypropylene Films

Type: Journal Paper

Author : Hua Li; Zhiwei Li; Zhijian Xu; Fuchang Lin; Bowen Wang; Haoyuan Li; Qin Zhang; Wenjuan Wang; Xiang Huang

Publisher: IEEE

Year: 2014

Thin-Film Transistor <inline-formula> <img src="/images/tex/21665.gif" alt="V_{\\rm th}"> </inline-formula> Shift Model Based on Kinetics of Electron Transfer in Gate Dielectric

Type: Journal Paper

Author : Wang, Lisa Ling; Liu, Tony Chi; Yuying Cai; Shengdong Zhang

Publisher: IEEE

Year: 2014

Statistical Fluctuations in HfO<sub><italic><bold>x</bold></italic></sub> Resistive-Switching Memory: Part II—Random Telegraph Noise

Type: Journal Paper

Author : Ambrogio, Stefano; Balatti, S.; Cubeta, A.; Calderoni, Alessandro; Ramaswamy, Nirmal; Ielmini, Daniele

Publisher: IEEE

Year: 2014

Current Conduction Mechanism of Nitrogen-Doped <inline-formula> <img src="/images/tex/21696.gif" alt="{\\rm AlO}_{x}"> </inline-formula> RRAM

Type: Journal Paper

Author : Wanki Kim; Sung Il Park; Zhiping Zhang; Wong, Simon

Publisher: IEEE

Year: 2014

Technical program committee

Type: Conference Paper

Publisher: IEEE

Year: 2014

Design and realisation of a high-performance active pitch-controlled H-Darrieus VAWT for urban installations

Type: Conference Paper

Author : Mauri, M.; Bayati, I.; Belloli, M.

Publisher: IEEE

Year: 2014

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Non-Linearity Analysis of RF Ohmic Switches Based on Phase Change Materials

Can Transient Phenomena Help Improving Time Resolution in Scintillators?

Petabit/s transmission using multicore fibers

Adaptive identification of continuous-time switched linear and piecewise linear systems

Electric Field and Temperature Dependence of Electrical Conductivity in Biaxially Oriented Polypropylene Films

Thin-Film Transistor <inline-formula> <img src="/images/tex/21665.gif" alt="V_{\\rm th}"> </inline-formula> Shift Model Based on Kinetics of Electron Transfer in Gate Dielectric

Statistical Fluctuations in HfO<sub><italic><bold>x</bold></italic></sub> Resistive-Switching Memory: Part II—Random Telegraph Noise

Current Conduction Mechanism of Nitrogen-Doped <inline-formula> <img src="/images/tex/21696.gif" alt="{\\rm AlO}_{x}"> </inline-formula> RRAM

Technical program committee

Design and realisation of a high-performance active pitch-controlled H-Darrieus VAWT for urban installations

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Non-Linearity Analysis of RF Ohmic Switches Based on Phase Change Materials

Can Transient Phenomena Help Improving Time Resolution in Scintillators?

Petabit/s transmission using multicore fibers

Adaptive identification of continuous-time switched linear and piecewise linear systems

Electric Field and Temperature Dependence of Electrical Conductivity in Biaxially Oriented Polypropylene Films

Thin-Film Transistor <inline-formula> <img src="/images/tex/21665.gif" alt="V_{\\rm th}"> </inline-formula> Shift Model Based on Kinetics of Electron Transfer in Gate Dielectric

Statistical Fluctuations in HfO<sub><italic><bold>x</bold></italic></sub> Resistive-Switching Memory: Part II&#x2014;Random Telegraph Noise

Current Conduction Mechanism of Nitrogen-Doped <inline-formula> <img src="/images/tex/21696.gif" alt="{\\rm AlO}_{x}"> </inline-formula> RRAM

Technical program committee

Design and realisation of a high-performance active pitch-controlled H-Darrieus VAWT for urban installations

Statistical Fluctuations in HfO<sub><italic><bold>x</bold></italic></sub> Resistive-Switching Memory: Part II—Random Telegraph Noise