Statistical Fluctuations in HfO<sub><italic><bold>x</bold></italic></sub> Resistive-Switching Memory: Part II—Random Telegraph Noise
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: 2014شناسه الکترونیک: 10.1109/TED.2014.2330202
کلیدواژه(گان): Poole-Frenkel effect,integrated circuit noise,random noise,random-access storage,HfO<,sub>,x<,/sub>,Joule heating,Poole-Frenkel barrier modifications,RRAM,conductive filament,localized current path,random telegraph noise,read noise,resistive switching memory,resistive switching random access memory,statistical fluctuations,Current measurement,Doping,Noise,Resistance,Switches,Time measurement,Voltage measurement,Noise fluctuations,random telegraph noise (RTN),resi
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Statistical Fluctuations in HfO<sub><italic><bold>x</bold></italic></sub> Resistive-Switching Memory: Part II&#x2014;Random Telegraph Noise
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| contributor author | Ambrogio, Stefano | |
| contributor author | Balatti, S. | |
| contributor author | Cubeta, A. | |
| contributor author | Calderoni, Alessandro | |
| contributor author | Ramaswamy, Nirmal | |
| contributor author | Ielmini, Daniele | |
| date accessioned | 2020-03-13T00:11:49Z | |
| date available | 2020-03-13T00:11:49Z | |
| date issued | 2014 | |
| identifier issn | 0018-9383 | |
| identifier other | 6847142.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1137855 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Statistical Fluctuations in HfO<sub><italic><bold>x</bold></italic></sub> Resistive-Switching Memory: Part II—Random Telegraph Noise | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8319831 | |
| subject keywords | Poole-Frenkel effect | |
| subject keywords | integrated circuit noise | |
| subject keywords | random noise | |
| subject keywords | random-access storage | |
| subject keywords | HfO< | |
| subject keywords | sub> | |
| subject keywords | x< | |
| subject keywords | /sub> | |
| subject keywords | Joule heating | |
| subject keywords | Poole-Frenkel barrier modifications | |
| subject keywords | RRAM | |
| subject keywords | conductive filament | |
| subject keywords | localized current path | |
| subject keywords | random telegraph noise | |
| subject keywords | read noise | |
| subject keywords | resistive switching memory | |
| subject keywords | resistive switching random access memory | |
| subject keywords | statistical fluctuations | |
| subject keywords | Current measurement | |
| subject keywords | Doping | |
| subject keywords | Noise | |
| subject keywords | Resistance | |
| subject keywords | Switches | |
| subject keywords | Time measurement | |
| subject keywords | Voltage measurement | |
| subject keywords | Noise fluctuations | |
| subject keywords | random telegraph noise (RTN) | |
| subject keywords | resi | |
| identifier doi | 10.1109/TED.2014.2330202 | |
| journal title | Electron Devices, IEEE Transactions on | |
| journal volume | 61 | |
| journal issue | 8 | |
| filesize | 3296916 | |
| citations | 0 |