Effect of Ti interlayer on the formation of epitaxial NiSiGe on strained Si<inf>0.8</inf>Ge<inf>0.2</inf>
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: 2014DOI: 10.1109/ISETC.2014.7010803
Keyword(s): SVM,feature space,parameter optimization,water pollutant
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Effect of Ti interlayer on the formation of epitaxial NiSiGe on strained Si<inf>0.8</inf>Ge<inf>0.2</inf>
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| date accessioned | 2020-03-12T19:56:47Z | |
| date available | 2020-03-12T19:56:47Z | |
| date issued | 2014 | |
| identifier other | 6842062.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/996190?locale-attribute=en | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Effect of Ti interlayer on the formation of epitaxial NiSiGe on strained Si<inf>0.8</inf>Ge<inf>0.2</inf> | |
| type | Conference Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8115857 | |
| subject keywords | SVM | |
| subject keywords | feature space | |
| subject keywords | parameter optimization | |
| subject keywords | water pollutant | |
| identifier doi | 10.1109/ISETC.2014.7010803 | |
| journal title | unction Technology (IWJT), 2014 International Workshop on | |
| filesize | 401292 | |
| citations | 0 | |
| contributor rawauthor | Hou, C. , Ping, Y. , Zhang, B. , Yu, W. , Xue, Z. , Wei, X. , Gao, H. , PENG, W. , Di, Z. , Zhang, M. |