Study on the Cone Calorimeter of Flame-Retardant Asphalt

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سال
: 2014
شناسه الکترونیک: 10.1109/SECON.2014.6950716
کلیدواژه(گان): field effect transistors,indium compounds,semiconductor device models,tunnel transistors,InAs,TFET-based circuits,circuit simulator,compact behavioral model,device physics,for homojunction compound semiconductor-based tunneling field effect transistors,gate voltage values,low power applications,output transfer characteristics,silicon based transistors,size 20 nm,Computers,Indexes,Logic gates,Mathematical model,Physics,Semiconductor device modeling,Transistors,compact model
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