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Small Signal Nonquasi-static Model for Common Double-Gate MOSFETs Adapted to Gate Oxide Thickness Asymmetry

contributor authorSharan, N. , Mahapatra, S.
date accessioned2020-03-12T19:30:14Z
date available2020-03-12T19:30:14Z
date issued2014
identifier other6733165.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/979908?locale-attribute=fa&show=full
formatgeneral
languageEnglish
titleSmall Signal Nonquasi-static Model for Common Double-Gate MOSFETs Adapted to Gate Oxide Thickness Asymmetry
typeConference Paper
contenttypeMetadata Only
identifier padid8094095
subject keywordsX-ray diffraction
subject keywordsX-ray fluorescence analysis
subject keywordsatomic force microscopy
subject keywordscopper compounds
subject keywordscrystal structure
subject keywordsellipsometry
subject keywordsgallium compounds
subject keywordsindium compounds
subject keywordsoptical constants
subject keywordsscanning electron microscopy
subject keywordssemiconductor growth
subject keywordssemiconductor thin films
subject keywordssurface morphology
subject keywordsternary semiconductors
subject keywordsvacuum deposition
subject keywordsAFM
subject keywordsCu(InGa)Se<
subject keywordssub>
subject keywords2<
subject keywords/sub>
subject keywordsSEM
subject keywordsX-ray diffraction
subject keywordsX-ray fluorescence
subject keywordsXRD
subject keywordsXRF
subject keywordsatomic force microscopy
subject keywordscomposition ratio
subject keywordscrystal structure
subject keywordsex-situ measurements
identifier doi10.1109/PVSC.2014.6924921
journal titleLSI Design and 2014 13th International Conference on Embedded Systems, 2014 27th International Confe
filesize584346
citations0


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