Compact Modeling of a Magnetic Tunnel Junction Based on Spin Orbit Torque
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سال
: 2014شناسه الکترونیک: 10.1109/TMAG.2014.2305695
کلیدواژه(گان): CMOS integrated circuits,MRAM devices,magnetic tunnelling,spin-orbit interactions,torque,CMOS-compatibility,Cadence Virtuoso platform,MRAM,SOT-MTJ device,Spectre simulator,Verilog-A language,hybrid MTJ-CMOS technology,integrated circuit,memories,spin orbit torque,spin-transfer torque,three-terminal magnetic tunnel junctions,Current density,Integrated circuit modeling,Magnetic tunneling,Magnetization,Mathematical model,Switches,Writing,MRAM,Magnetic tunnel junction (MTJ)
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Compact Modeling of a Magnetic Tunnel Junction Based on Spin Orbit Torque
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contributor author | Jabeur, Kotb | |
contributor author | Di Pendina, G. | |
contributor author | Prenat, G. | |
contributor author | Buda-Prejbeanu, L.D. | |
contributor author | Dieny, Bernard | |
date accessioned | 2020-03-12T18:46:28Z | |
date available | 2020-03-12T18:46:28Z | |
date issued | 2014 | |
identifier issn | 0018-9464 | |
identifier other | 6740030.pdf | |
identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/969725 | |
format | general | |
language | English | |
publisher | IEEE | |
title | Compact Modeling of a Magnetic Tunnel Junction Based on Spin Orbit Torque | |
type | Journal Paper | |
contenttype | Metadata Only | |
identifier padid | 8004064 | |
subject keywords | CMOS integrated circuits | |
subject keywords | MRAM devices | |
subject keywords | magnetic tunnelling | |
subject keywords | spin-orbit interactions | |
subject keywords | torque | |
subject keywords | CMOS-compatibility | |
subject keywords | Cadence Virtuoso platform | |
subject keywords | MRAM | |
subject keywords | SOT-MTJ device | |
subject keywords | Spectre simulator | |
subject keywords | Verilog-A language | |
subject keywords | hybrid MTJ-CMOS technology | |
subject keywords | integrated circuit | |
subject keywords | memories | |
subject keywords | spin orbit torque | |
subject keywords | spin-transfer torque | |
subject keywords | three-terminal magnetic tunnel junctions | |
subject keywords | Current density | |
subject keywords | Integrated circuit modeling | |
subject keywords | Magnetic tunneling | |
subject keywords | Magnetization | |
subject keywords | Mathematical model | |
subject keywords | Switches | |
subject keywords | Writing | |
subject keywords | MRAM | |
subject keywords | Magnetic tunnel junction (MTJ) | |
identifier doi | 10.1109/TMAG.2014.2305695 | |
journal title | Magnetics, IEEE Transactions on | |
journal volume | 50 | |
journal issue | 7 | |
filesize | 1451904 | |
citations | 1 |