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<formula formulatype="inline"> <img src="/images/tex/21154.gif" alt="{\\rm In}_{0.53}{\\rm Ga}_{0.47}{\\rm As}"> </formula> Multiple-Gate Field-Effect Transistors With Selectively Regrown Channels

contributor authorZota, Cezar B.
contributor authorWernersson, Lars-Erik
contributor authorLind, Erik
date accessioned2020-03-12T18:46:07Z
date available2020-03-12T18:46:07Z
date issued2014
identifier issn0741-3106
identifier other6739081.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/969521?locale-attribute=fa&show=full
formatgeneral
languageEnglish
publisherIEEE
title<formula formulatype="inline"> <img src="/images/tex/21154.gif" alt="{\\rm In}_{0.53}{\\rm Ga}_{0.47}{\\rm As}"> </formula> Multiple-Gate Field-Effect Transistors With Selectively Regrown Channels
typeJournal Paper
contenttypeMetadata Only
identifier padid8003822
subject keywordsIII-V semiconductors
subject keywordsMOSFET
subject keywordsgallium arsenide
subject keywordsindium compounds
subject keywordsmillimetre wave field effect transistors
subject keywordsnanowires
subject keywordsIII-V multiple-gate MOSFET
subject keywordsIn<
subject keywordssub>
subject keywords0.53<
subject keywords/sub>
subject keywordsGa<
subject keywordssub>
subject keywords0.47<
subject keywords/sub>
subject keywordsAs
subject keywordsdrain-induced barrier
subject keywordsextrapolated cutoff frequency
subject keywordsfrequency 210 GHz
subject keywordsfrequency 250 GHz
subject keywordsmaximum oscillation frequency
subject keywordsminimum subthreshold slope
subject keywordsn-channel MuGFET
subject keywordsn-channel multiple-gate field-effect transistors
subject keywordsselectively regrown channels
subject keywordsselectively regrown lateral nanowires
subject keywordsInd
identifier doi10.1109/LED.2014.2301843
journal titleElectron Device Letters, IEEE
journal volume35
journal issue3
filesize1737012
citations0


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