A Test Structure to Characterize Nano-Scale Ohmic Contacts in III-V MOSFETs
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Year
: 2014DOI: 10.1109/LED.2013.2295328
Keyword(s): MOSFET,contact resistance,gallium arsenide,indium compounds,molybdenum,ohmic contacts,semiconductor device models,transmission lines,2D distributed resistive network,III-V MOSFET,Kelvin measurements,Mo-InGaAs,Mo-InGaAs contacts,TLM,contact resistance,contact resistivity,contact spacing,electrical properties,metal sheet resistance,nanoscale metal-semiconductor contacts,nanoscale ohmic contacts,semiconductor sheet resistance,test structure,transmission line model,Contact re
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A Test Structure to Characterize Nano-Scale Ohmic Contacts in III-V MOSFETs
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| contributor author | Wenjie Lu | |
| contributor author | Guo, Anjin | |
| contributor author | Vardi, Alon | |
| contributor author | del Alamo, Jesus /A/. | |
| date accessioned | 2020-03-12T18:39:15Z | |
| date available | 2020-03-12T18:39:15Z | |
| date issued | 2014 | |
| identifier issn | 0741-3106 | |
| identifier other | 6704309.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/965729?locale-attribute=en | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | A Test Structure to Characterize Nano-Scale Ohmic Contacts in III-V MOSFETs | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 7999423 | |
| subject keywords | MOSFET | |
| subject keywords | contact resistance | |
| subject keywords | gallium arsenide | |
| subject keywords | indium compounds | |
| subject keywords | molybdenum | |
| subject keywords | ohmic contacts | |
| subject keywords | semiconductor device models | |
| subject keywords | transmission lines | |
| subject keywords | 2D distributed resistive network | |
| subject keywords | III-V MOSFET | |
| subject keywords | Kelvin measurements | |
| subject keywords | Mo-InGaAs | |
| subject keywords | Mo-InGaAs contacts | |
| subject keywords | TLM | |
| subject keywords | contact resistance | |
| subject keywords | contact resistivity | |
| subject keywords | contact spacing | |
| subject keywords | electrical properties | |
| subject keywords | metal sheet resistance | |
| subject keywords | nanoscale metal-semiconductor contacts | |
| subject keywords | nanoscale ohmic contacts | |
| subject keywords | semiconductor sheet resistance | |
| subject keywords | test structure | |
| subject keywords | transmission line model | |
| subject keywords | Contact re | |
| identifier doi | 10.1109/LED.2013.2295328 | |
| journal title | Electron Device Letters, IEEE | |
| journal volume | 35 | |
| journal issue | 2 | |
| filesize | 818930 | |
| citations | 0 |