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High-Performance Solution-Processed InGaZnO Thin-Film Transistor Fabricated by Ozone-Assisted Atmospheric Pressure Mist Deposition

contributor authorFuruta, Mamoru
contributor authorKawaharamura, Toshiyuki
contributor authorUchida, Tomoyuki
contributor authorDapeng Wang
contributor authorSanada, Masayuki
date accessioned2020-03-12T18:36:34Z
date available2020-03-12T18:36:34Z
date issued2014
identifier issn1551-319X
identifier other6685873.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/964224?locale-attribute=fa&show=full
formatgeneral
languageEnglish
publisherIEEE
titleHigh-Performance Solution-Processed InGaZnO Thin-Film Transistor Fabricated by Ozone-Assisted Atmospheric Pressure Mist Deposition
typeJournal Paper
contenttypeMetadata Only
identifier padid7997688
subject keywordsIII-V semiconductors
subject keywordsaluminium compounds
subject keywordsatmospheric pressure
subject keywordschemical vapour deposition
subject keywordselectric breakdown
subject keywordselectric fields
subject keywordsgallium compounds
subject keywordsindium compounds
subject keywordspermittivity
subject keywordsthin film transistors
subject keywordswide band gap semiconductors
subject keywordszinc compounds
subject keywordsAP-deposited stack
subject keywordsAlO<
subject keywordssub>
subject keywordsx<
subject keywords/sub>
subject keywordsCVD
subject keywordsInGaZnO
subject keywordsTFT
subject keywordsbreakdown electric field
subject keywordschemical vapor deposition
subject keywordsdielectric constant
subject keywordselectrical properties
subject keywordsfield effect mobility
subject keywordsgate dielectric stack
subject keywordshigh-performance solution-processed thi
identifier doi10.1109/JDT.2013.2294967
journal titleDisplay Technology, Journal of
journal volume10
journal issue11
filesize1059706
citations0


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