Fast Light-Emitting Silicon-Germanium Nanostructures
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سال
: 2014شناسه الکترونیک: 10.1109/JSTQE.2013.2292878
کلیدواژه(گان): Ge-Si alloys,multilayers,nanophotonics,nanostructured materials,photoluminescence,Si-Si<,sub>,0.6<,/sub>,Ge<,sub>,0.4<,/sub>,cluster multilayers,fast light-emitting silicon-germanium nanostructures,heterointerface composition,photoluminescence measurements,time-dependent recombination rates,Nanostructures,Radiative recombination,Silicon,Silicon germanium,Temperature measurement,Wavelength measurement,Carrier recombination,SiGe alloy,germanium,interface,nanos
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Fast Light-Emitting Silicon-Germanium Nanostructures
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| contributor author | Lockwood, David J. | |
| contributor author | Tsybeskov, Leonid | |
| date accessioned | 2020-03-12T18:36:13Z | |
| date available | 2020-03-12T18:36:13Z | |
| date issued | 2014 | |
| identifier issn | 1077-260X | |
| identifier other | 6684282.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/964009?locale-attribute=fa | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Fast Light-Emitting Silicon-Germanium Nanostructures | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 7997423 | |
| subject keywords | Ge-Si alloys | |
| subject keywords | multilayers | |
| subject keywords | nanophotonics | |
| subject keywords | nanostructured materials | |
| subject keywords | photoluminescence | |
| subject keywords | Si-Si< | |
| subject keywords | sub> | |
| subject keywords | 0.6< | |
| subject keywords | /sub> | |
| subject keywords | Ge< | |
| subject keywords | sub> | |
| subject keywords | 0.4< | |
| subject keywords | /sub> | |
| subject keywords | cluster multilayers | |
| subject keywords | fast light-emitting silicon-germanium nanostructures | |
| subject keywords | heterointerface composition | |
| subject keywords | photoluminescence measurements | |
| subject keywords | time-dependent recombination rates | |
| subject keywords | Nanostructures | |
| subject keywords | Radiative recombination | |
| subject keywords | Silicon | |
| subject keywords | Silicon germanium | |
| subject keywords | Temperature measurement | |
| subject keywords | Wavelength measurement | |
| subject keywords | Carrier recombination | |
| subject keywords | SiGe alloy | |
| subject keywords | germanium | |
| subject keywords | interface | |
| subject keywords | nanos | |
| identifier doi | 10.1109/JSTQE.2013.2292878 | |
| journal title | Selected Topics in Quantum Electronics, IEEE Journal of | |
| journal volume | 20 | |
| journal issue | 4 | |
| filesize | 4468026 | |
| citations | 0 |