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Intrinsic Performance of InAs Nanowire Capacitors

contributor authorJansson, Karl
contributor authorLind, Erik
contributor authorWernersson, Lars-Erik
date accessioned2020-03-12T18:35:44Z
date available2020-03-12T18:35:44Z
date issued2014
identifier issn0018-9383
identifier other6680775.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/963740?locale-attribute=en&show=full
formatgeneral
languageEnglish
publisherIEEE
titleIntrinsic Performance of InAs Nanowire Capacitors
typeJournal Paper
contenttypeMetadata Only
identifier padid7997109
subject keywordsQ-factor
subject keywordsRC circuits
subject keywordsSchrodinger equation
subject keywordscapacitors
subject keywordsindium compounds
subject keywordsnanowires
subject keywordsstochastic processes
subject keywordsInAs
subject keywordsNW capacitors
subject keywordsSchro&
subject keywords#x0308
subject keywordsdinger-Poisson solver
subject keywordsband structure
subject keywordscarrier concentration
subject keywordsconduction band nonparabolicity
subject keywordscurrent-voltage characteristics
subject keywordsdistributed RC model
subject keywordsintrinsic performance
subject keywordsquality factor
subject keywordsthreshold voltage
subject keywordsvertical nanowire capacitors
subject keywordsCapacitors
subject keywordsEigenvalues and eigenfunctions
subject keywordsElectric potential
subject keywordsElectrostatics
subject keywordsEquations
subject keywordsLogic gates
subject keywordsMathematical
identifier doi10.1109/TED.2013.2293456
journal titleElectron Devices, IEEE Transactions on
journal volume61
journal issue2
filesize4538731
citations0


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