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Dynamic Infrared Lifetime Mapping for the Measurement of the Saturation Current Density of Highly Doped Regions in Silicon

contributor authorMuller, Johannes
contributor authorHannebauer, Helge
contributor authorMader, Christoph
contributor authorHaase, Frerk
contributor authorBothe, Klaus
date accessioned2020-03-12T18:35:34Z
date available2020-03-12T18:35:34Z
date issued2014
identifier issn2156-3381
identifier other6680662.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/963639?locale-attribute=fa&show=full
formatgeneral
languageEnglish
publisherIEEE
titleDynamic Infrared Lifetime Mapping for the Measurement of the Saturation Current Density of Highly Doped Regions in Silicon
typeJournal Paper
contenttypeMetadata Only
identifier padid7996985
subject keywordscarrier density
subject keywordscarrier lifetime
subject keywordselectrical resistivity
subject keywordselemental semiconductors
subject keywordsphosphorus
subject keywordsphotoconductivity
subject keywordssilicon
subject keywordsSi:P
subject keywordscamera signal
subject keywordscharge-carrier density
subject keywordsdynamic ILM technique
subject keywordsdynamic infrared lifetime mapping
subject keywordshighly doped regions
subject keywordsinjection dependent lifetimes
subject keywordsmodulated sample temperature
subject keywordsphosphorous diffused samples
subject keywordsphoto-conductance decay measurements
subject keywordssaturation current density measurement
subject keywordssheet resistances
subject keywordstextured samples
subject keywordsCameras
subject keywordsCharge carriers
subject keywordsDensity measuremen
identifier doi10.1109/JPHOTOV.2013.2293062
journal titlePhotovoltaics, IEEE Journal of
journal volume4
journal issue2
filesize702991
citations0


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