Evaluation of 6.5-kV SiC p-i-n Diodes in a Medium-Voltage, High-Power 3L-NPC Converter
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: 2014شناسه الکترونیک: 10.1109/TPEL.2013.2290865
کلیدواژه(گان): insulated gate bipolar transistors,p-i-n diodes,power semiconductor diodes,silicon compounds,switching convertors,wide band gap semiconductors,IGBT,SiC,SiC NPC diodes,SiC p-i-n diodes,antiparallel diodes,apparent power 8 MVA,current change rate,electrothermal models,high-power 3L-NPC converter,insulated gate bipolar transistors,maximum power output,medium-voltage 3L-NPC converter,neutral point clamped,power semiconductors,switching frequency,voltage 3.3 kV,voltage 4.16 kV
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Evaluation of 6.5-kV SiC p-i-n Diodes in a Medium-Voltage, High-Power 3L-NPC Converter
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| contributor author | Filsecker, Felipe | |
| contributor author | Alvarez, R. | |
| contributor author | Bernet, Steffen | |
| date accessioned | 2020-03-12T18:33:00Z | |
| date available | 2020-03-12T18:33:00Z | |
| date issued | 2014 | |
| identifier issn | 0885-8993 | |
| identifier other | 6663717.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/962198 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Evaluation of 6.5-kV SiC p-i-n Diodes in a Medium-Voltage, High-Power 3L-NPC Converter | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 7995138 | |
| subject keywords | insulated gate bipolar transistors | |
| subject keywords | p-i-n diodes | |
| subject keywords | power semiconductor diodes | |
| subject keywords | silicon compounds | |
| subject keywords | switching convertors | |
| subject keywords | wide band gap semiconductors | |
| subject keywords | IGBT | |
| subject keywords | SiC | |
| subject keywords | SiC NPC diodes | |
| subject keywords | SiC p-i-n diodes | |
| subject keywords | antiparallel diodes | |
| subject keywords | apparent power 8 MVA | |
| subject keywords | current change rate | |
| subject keywords | electrothermal models | |
| subject keywords | high-power 3L-NPC converter | |
| subject keywords | insulated gate bipolar transistors | |
| subject keywords | maximum power output | |
| subject keywords | medium-voltage 3L-NPC converter | |
| subject keywords | neutral point clamped | |
| subject keywords | power semiconductors | |
| subject keywords | switching frequency | |
| subject keywords | voltage 3.3 kV | |
| subject keywords | voltage 4.16 kV | |
| identifier doi | 10.1109/TPEL.2013.2290865 | |
| journal title | Power Electronics, IEEE Transactions on | |
| journal volume | 29 | |
| journal issue | 10 | |
| filesize | 1042910 | |
| citations | 0 |