An Experimental Evaluation of SiC Switches in Soft-Switching Converters
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: 2014DOI: 10.1109/TPEL.2013.2265380
Keyword(s): calorimetry,insulated gate bipolar transistors,power semiconductor switches,silicon compounds,zero current switching,zero voltage switching,IGBT,SiC,calorimetric approach,conductivity modulation lag,dynamic conduction losses,frequency 200 kHz,gate/base driver point-of-view,insulated gate bipolar transistors,silicon carbide transistors,sinusoidal current,soft-switching converter test system,vertical trench junction field-effect transistor,Bipolar junction transistor (BJT),condu
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An Experimental Evaluation of SiC Switches in Soft-Switching Converters
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| contributor author | Ranstad, Per | |
| contributor author | Nee, H.-P. | |
| contributor author | Linner, J. | |
| contributor author | Peftitsis, Dimosthenis | |
| date accessioned | 2020-03-12T18:24:23Z | |
| date available | 2020-03-12T18:24:23Z | |
| date issued | 2014 | |
| identifier issn | 0885-8993 | |
| identifier other | 6544271.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/957402?locale-attribute=en | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | An Experimental Evaluation of SiC Switches in Soft-Switching Converters | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 7989654 | |
| subject keywords | calorimetry | |
| subject keywords | insulated gate bipolar transistors | |
| subject keywords | power semiconductor switches | |
| subject keywords | silicon compounds | |
| subject keywords | zero current switching | |
| subject keywords | zero voltage switching | |
| subject keywords | IGBT | |
| subject keywords | SiC | |
| subject keywords | calorimetric approach | |
| subject keywords | conductivity modulation lag | |
| subject keywords | dynamic conduction losses | |
| subject keywords | frequency 200 kHz | |
| subject keywords | gate/base driver point-of-view | |
| subject keywords | insulated gate bipolar transistors | |
| subject keywords | silicon carbide transistors | |
| subject keywords | sinusoidal current | |
| subject keywords | soft-switching converter test system | |
| subject keywords | vertical trench junction field-effect transistor | |
| subject keywords | Bipolar junction transistor (BJT) | |
| subject keywords | condu | |
| identifier doi | 10.1109/TPEL.2013.2265380 | |
| journal title | Power Electronics, IEEE Transactions on | |
| journal volume | 29 | |
| journal issue | 5 | |
| filesize | 888248 | |
| citations | 1 |