Increase in Read Noise Margin of Single-Bit-Line SRAM Using Adiabatic Change of Word Line Voltage
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سال
: 2014شناسه الکترونیک: 10.1109/TVLSI.2013.2247642
کلیدواژه(گان): SRAM chips,circuit noise,flip-flops,low-power electronics,BL capacitance,DNM,adiabatic change,dynamic noise margin,flip-flop,left access transistor,read noise margin,shared reading port,single-bit-line SRAM circuit,static RAM circuit,time-wise change,word line voltage,Adiabatic,low power,read noise margin (RNM)
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آمار بازدید
Increase in Read Noise Margin of Single-Bit-Line SRAM Using Adiabatic Change of Word Line Voltage
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| contributor author | Nakata, Sho | |
| contributor author | Hanazono, Hiroki | |
| contributor author | Makino, Hiroaki | |
| contributor author | Morimura, Hiroki | |
| contributor author | Miyama, Masayuki | |
| contributor author | Matsuda, Yuuki | |
| date accessioned | 2020-03-12T18:22:32Z | |
| date available | 2020-03-12T18:22:32Z | |
| date issued | 2014 | |
| identifier issn | 1063-8210 | |
| identifier other | 6490418.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/956349?locale-attribute=fa | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Increase in Read Noise Margin of Single-Bit-Line SRAM Using Adiabatic Change of Word Line Voltage | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 7988357 | |
| subject keywords | SRAM chips | |
| subject keywords | circuit noise | |
| subject keywords | flip-flops | |
| subject keywords | low-power electronics | |
| subject keywords | BL capacitance | |
| subject keywords | DNM | |
| subject keywords | adiabatic change | |
| subject keywords | dynamic noise margin | |
| subject keywords | flip-flop | |
| subject keywords | left access transistor | |
| subject keywords | read noise margin | |
| subject keywords | shared reading port | |
| subject keywords | single-bit-line SRAM circuit | |
| subject keywords | static RAM circuit | |
| subject keywords | time-wise change | |
| subject keywords | word line voltage | |
| subject keywords | Adiabatic | |
| subject keywords | low power | |
| subject keywords | read noise margin (RNM) | |
| identifier doi | 10.1109/TVLSI.2013.2247642 | |
| journal title | Very Large Scale Integration (VLSI) Systems, IEEE Transactions on | |
| journal volume | 22 | |
| journal issue | 3 | |
| filesize | 1713490 | |
| citations | 0 |