Schottky barrier resistive memory with highly uniform switching
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Year
: 2014DOI: 10.1166/jnn.2014.8723
Keyword(s): Hopping Conduction,Resistive Random Access Memory (RRAM),Schottky Barrier
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Schottky barrier resistive memory with highly uniform switching
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| contributor author | Cheng, C.H. | |
| date accessioned | 2020-03-12T16:44:25Z | |
| date available | 2020-03-12T16:44:25Z | |
| date issued | 2014 | |
| identifier issn | 1533-4880 | |
| identifier other | 10.1166-jnn.2014.8723.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/931263?locale-attribute=en | |
| format | general | |
| language | English | |
| publisher | American Scientific Publishers | |
| title | Schottky barrier resistive memory with highly uniform switching | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 7678309 | |
| subject keywords | Hopping Conduction | |
| subject keywords | Resistive Random Access Memory (RRAM) | |
| subject keywords | Schottky Barrier | |
| identifier doi | 10.1166/jnn.2014.8723 | |
| journal title | Journal of Nanoscience and Nanotechnology | |
| journal volume | 14 | |
| journal issue | 7 | |
| filesize | 458287 | |
| citations | 0 |