Thermoelectric power and low-field electron mobility in AlxGa1−xN lattice-matched to GaN

Abstract

The results of thermoelectric power and electron drift mobility in Al xGa1−xN lattice-matched to GaN are<br><br>calculated for different temperatures, free-electron concentrations and compositions. The two-mode nature<br><br>of the polar optic phonons is considered jointly with deformation potential acoustic, piezoelectric, alloy and<br><br>ionized-impurity scattering. Band non-parabolicity, admixture of p functions, arbitrary degeneracy of the<br><br>electron distribution and the screening effects of free carriers on the scattering probabilities are incorporated.<br><br>The Boltzmann equation is solved by an iterative technique using the currently established values of the<br><br>material parameters. The iterative results are in fair agreement with other recent calculations obtained using<br><br>the relaxation-time approximation and experimental methods.